@inproceedings{5c6e9107c5a540ed9b777e259c73f75f,
title = "TE-pass polarizer using metal vias for silicon-on-insulator platform",
abstract = "A TE-pass polarizer that uses metal vias for absorption of TM light is proposed. A 100-micron device can achieve 20dB extinction ratio with 0.23dB insertion loss. The polarizer is compatible with standard silicon-on-insulator foundry processes.",
keywords = "polarizer, silicon photonics, TE, TM, via",
author = "Humaira Zafar and Yousuf, {Soha E.} and Anatol Khilo",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; Opto-Electronics and Communications Conference, OECC 2015 ; Conference date: 28-06-2015 Through 02-07-2015",
year = "2015",
month = nov,
day = "30",
doi = "10.1109/OECC.2015.7340333",
language = "British English",
series = "2015 Opto-Electronics and Communications Conference, OECC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 Opto-Electronics and Communications Conference, OECC 2015",
address = "United States",
}