TCAD simulation and modeling of impact ionization (II) enhanced thin film c-Si solar cells

This study investigates the performance of impact ionization (II) enhanced thin film c-Si solar cells using Technology Computer Aided Design simulation. 2-D numerical simulation is carried out to study the effect of II concerning the electrical and optical properties of the c-Si solar cell. We have introduced (Formula presented.) pocket with a high doping density of magnitude (Formula presented.) (Formula presented.) in an intrinsic absorber layer which increases the electric field near the junction up to 1 MV/m. The effects of II on various solar cell parameters like short circuit current density, open circuit voltage and quantum efficiency are investigated. The simulation results show that high concentration of (Formula presented.) pocket enhances the short circuit current density (Formula presented.) of c-Si solar cell without affecting its open circuit voltage (Formula presented.). In addition, the modelling results depict that by varying the doping concentration of (Formula presented.) pocket from (Formula presented.) to (Formula presented.) , the current density increases from 18 to (Formula presented.). Furthermore, an internal quantum efficiency of 189 % is achieved at (Formula presented.) pocket doping concentration of (Formula presented.) (Formula presented.).