Tailoring the optical properties of boron doped μc-Si: H thin films by changing the SiH4/H2 ratio using RF-PECVD process

Ghada Dushaq; Ammar Nayfeh; Mahmoud Rasras

doi:10.1364/FIO.2016.FTu3F.2

Tailoring the optical properties of boron doped μc-Si: H thin films by changing the SiH₄/H₂ ratio using RF-PECVD process

Ghada Dushaq, Ammar Nayfeh, Mahmoud Rasras

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper depicts the effect of SiH₄/H₂ dilution ratio (R) on the structural and optical properties of amorphous silicon matrix with embedded microcrystals of silicon. The thin films are prepared using standard RF-PECVD process at substrate temperature of 250 ° C.

Original language	British English
Title of host publication	Frontiers in Optics, FiO 2016
DOIs	https://doi.org/10.1364/FIO.2016.FTu3F.2
State	Published - 21 Jul 2014
Event	Frontiers in Optics, FiO 2016 - Rochester, United States Duration: 17 Oct 2016 → 21 Oct 2016

Publication series

Name	Optics InfoBase Conference Papers

Conference

Conference	Frontiers in Optics, FiO 2016
Country/Territory	United States
City	Rochester
Period	17/10/16 → 21/10/16

Access to Document

10.1364/FIO.2016.FTu3F.2

Cite this

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title = "Tailoring the optical properties of boron doped μc-Si: H thin films by changing the SiH4/H2 ratio using RF-PECVD process",

abstract = "This paper depicts the effect of SiH4/H2 dilution ratio (R) on the structural and optical properties of amorphous silicon matrix with embedded microcrystals of silicon. The thin films are prepared using standard RF-PECVD process at substrate temperature of 250 ° C.",

author = "Ghada Dushaq and Ammar Nayfeh and Mahmoud Rasras",

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AB - This paper depicts the effect of SiH4/H2 dilution ratio (R) on the structural and optical properties of amorphous silicon matrix with embedded microcrystals of silicon. The thin films are prepared using standard RF-PECVD process at substrate temperature of 250 ° C.

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AN - SCOPUS:85019536501

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BT - Frontiers in Optics, FiO 2016

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