Synthesis of SnO₂ nanowires their structural and H₂ gas sensing properties

SnO₂ nanowires were prepared on bare oxidized silicon, Au and SnO₂-coated substrates by thermal evaporation of tin grains in argon atmosphere at 900° C. X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM) were used to characterize the SnO₂ nanowires. FE-SEM images indicated that the size of SnO₂ nanowires depend on the type of substrate. Gas sensor was fabricated by dispersing SnO₂ nanowires on an interdigitated Pt-electrode. H₂ gas sensing properties of these sensors made of nanowires prepared on three different substrates were measured at various operating temperatures and concentrations respectively. SnO₂ nanowires deposited on Au-coated substrates showed the highest sensitivity of 11.5 at 100°C upon exposure to H₂ gas of 1000 ppm.