Synthesis and Characterization of Nano-Thick HfO2 Memristive Crossbar

Heba Abunahla, Baker Mohammad

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

1 Scopus citations


In this chapter, the geometric scaling effect is investigated on the unipolar switching behavior of nano-thick Pd(TE)/Hf (capping)/HfO2/Pd(BE) metal-insulator-metal memristive devices. The electrical I–V characteristics of such device are studied as a function of the active area and thickness of each of the metal-oxide film and the capping layer. The device active area is shown to play a critical role in dictating the magnitude of the threshold turn-on voltage (V ON). For (Hf-7 nm/HfO2-10 nm) stack particularly, it is found that the average V ON decreases from 4.7 to 2.8 V when the active area increases from 50 × 50 to 200 × 200 µm2. Beyond this size, the threshold V ON saturates and the device active area have a minimal effect on V ON. Also, the switching ON voltage increases when the capping layer thickness increases as it adds to the total active film of the device. For the fabricated devices, decreasing the oxide thickness from 10-nm to 5-nm reduces the average turn-on voltage by 21-to-27% for 50 × 50-to-400 × 400 µm2 active area range, demonstrating an improvement in the threshold power consumption of the memristor. These findings can be used to guide the design and fabrication of memristors for an improved RRAM and memristive-based applications.

Original languageBritish English
Title of host publicationAnalog Circuits and Signal Processing
Number of pages12
StatePublished - 2018

Publication series

NameAnalog Circuits and Signal Processing
ISSN (Print)1872-082X
ISSN (Electronic)2197-1854


  • Characterization
  • Fabrication
  • Filament
  • HfO
  • Mechanism
  • Memristor
  • Nano
  • Size
  • Switching
  • Thickness
  • Unipolar


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