Switching Characterization of SiC MOSFETs in Three-Level Active Neutral-Point-Clamped Inverter Application

Mengxing Chen, Donghua Pan, Huai Wang, Xiongfei Wang, Frede Blaabjerg, Wei Wang

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    7 Scopus citations

    Abstract

    The switching characterization of power devices is critical for improving the efficiency and reliability of power electronic converters. In this paper, the switching characteristics of silicon carbide (SiC) MOSFETs in a three-level active neutral-point-clamped (3L-ANPC) inverter are investigated. A parasitic model of the 3L-ANPC phase-leg is proposed first based on a design case and its ANSYS/Q3D simulation. Then, two typical commutation modes for ANPC inverters, namely the outer mode and the inner mode, are studied, and the separate switching loops and parasitic inductances are identified according to the parasitic model. Knowing this, double-pulse tests (DPTs) for each type of commutation are conducted. The differences in terms of switching characteristics and switching dissipations are fully revealed. The conclusion drawn can be utilized for developing the next-generation highly efficient and reliable SiC MOSFET based 3L-ANPC inverters.

    Original languageBritish English
    Title of host publicationICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages1793-1799
    Number of pages7
    ISBN (Electronic)9788957083130
    StatePublished - May 2019
    Event10th International Conference on Power Electronics - ECCE Asia, ICPE 2019 - ECCE Asia - Busan, Korea, Republic of
    Duration: 27 May 201930 May 2019

    Publication series

    NameICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia

    Conference

    Conference10th International Conference on Power Electronics - ECCE Asia, ICPE 2019 - ECCE Asia
    Country/TerritoryKorea, Republic of
    CityBusan
    Period27/05/1930/05/19

    Keywords

    • And switching characterization
    • ANPC inverter
    • Parasitic inductance
    • SiC MOSFET

    Fingerprint

    Dive into the research topics of 'Switching Characterization of SiC MOSFETs in Three-Level Active Neutral-Point-Clamped Inverter Application'. Together they form a unique fingerprint.

    Cite this