@inproceedings{7ed6173235c444b2bb17ecfc60e840d1,
title = "Surface passivation method for optimum performance of 4H-SiC devices",
abstract = "4H-Silicon Carbide (SiC) is an ideal candidate for electronics that is subjected to harsh environments such as high temperatures and radiation. Over the recent years, substantial research is being done to develop and optimize 4H-SiC bipolar and metal-oxide-semiconductor devices for their potential use in various applications. One of the key issues that has proved to be a bottleneck in realizing the full potential of 4H-SiC devices is the quality of the 4H-SiC/ SiO2 interface. Devices based on 4H-SiC suffer from degraded performance due to the defects at the oxide/semiconductor interface. These defects, known as the interface traps, can be suppressed by optimal oxidation and passivation methods. Unlike silicon, a suitable recipe for passivation that can adequately reduce the density of the interface states in 4H-SiC has not been formulated yet. This paper proposes a potential passivation scheme for 4H-SiC based on an extensive review of the state-of-The-Art of surface passivation.",
author = "Amna Siddiqui and Hazem Elgabra and Shakti Singh",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 59th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2016 ; Conference date: 16-10-2016 Through 19-10-2016",
year = "2016",
month = jul,
day = "2",
doi = "10.1109/MWSCAS.2016.7870135",
language = "British English",
series = "Midwest Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 IEEE 59th International Midwest Symposium on Circuits and Systems, MWSCAS 2016",
address = "United States",
}