Study on Oscillations during Short Circuit of MW-Scale IGBT Power Modules by Means of a 6-kA/1.1-kV Nondestructive Testing System

Rui Wu; Paula Diaz Reigosa; Francesco Iannuzzo; Liudmila Smirnova; Huai Wang; Frede Blaabjerg

doi:10.1109/JESTPE.2015.2414448

Study on Oscillations during Short Circuit of MW-Scale IGBT Power Modules by Means of a 6-kA/1.1-kV Nondestructive Testing System

Rui Wu, Paula Diaz Reigosa, Francesco Iannuzzo, Liudmila Smirnova, Huai Wang, Frede Blaabjerg

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

This paper uses a 6-kA/1.1-kV nondestructive testing system for the analysis of the short-circuit behavior of insulated-gate bipolar transistor (IGBT) power modules. A field-programmable gate array enables the definition of control signals to an accuracy of 10 ns. Multiple 1.7-kV/1-kA IGBT power modules displayed severe divergent oscillations, which were subsequently characterized. Experimental tests indicate that nonnegligible circuit stray inductance plays an important role in the divergent oscillations. In addition, the temperature dependence of the transconductance is proposed as an important element in triggering for the oscillations.

Original language	British English
Article number	7064726
Pages (from-to)	756-765
Number of pages	10
Journal	IEEE Journal of Emerging and Selected Topics in Power Electronics
Volume	3
Issue number	3
DOIs	https://doi.org/10.1109/JESTPE.2015.2414448
State	Published - 30 Sep 2015

Keywords

Insulated-Gate Bipolar Transistor (IGBT)
Non-destructive Testing
Oscillations
Power Modules
Reliability
Short Circuit

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10.1109/JESTPE.2015.2414448

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@article{561ada1da9b4410a9265a09383648c6d,

title = "Study on Oscillations during Short Circuit of MW-Scale IGBT Power Modules by Means of a 6-kA/1.1-kV Nondestructive Testing System",

abstract = "This paper uses a 6-kA/1.1-kV nondestructive testing system for the analysis of the short-circuit behavior of insulated-gate bipolar transistor (IGBT) power modules. A field-programmable gate array enables the definition of control signals to an accuracy of 10 ns. Multiple 1.7-kV/1-kA IGBT power modules displayed severe divergent oscillations, which were subsequently characterized. Experimental tests indicate that nonnegligible circuit stray inductance plays an important role in the divergent oscillations. In addition, the temperature dependence of the transconductance is proposed as an important element in triggering for the oscillations.",

keywords = "Insulated-Gate Bipolar Transistor (IGBT), Non-destructive Testing, Oscillations, Power Modules, Reliability, Short Circuit",

author = "Rui Wu and {Diaz Reigosa}, Paula and Francesco Iannuzzo and Liudmila Smirnova and Huai Wang and Frede Blaabjerg",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2015",

month = sep,

day = "30",

doi = "10.1109/JESTPE.2015.2414448",

language = "British English",

volume = "3",

pages = "756--765",

journal = "IEEE Journal of Emerging and Selected Topics in Power Electronics",

issn = "2168-6777",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

Study on Oscillations during Short Circuit of MW-Scale IGBT Power Modules by Means of a 6-kA/1.1-kV Nondestructive Testing System. / Wu, Rui; Diaz Reigosa, Paula; Iannuzzo, Francesco et al.
In: IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 3, No. 3, 7064726, 30.09.2015, p. 756-765.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Study on Oscillations during Short Circuit of MW-Scale IGBT Power Modules by Means of a 6-kA/1.1-kV Nondestructive Testing System

AU - Wu, Rui

AU - Diaz Reigosa, Paula

AU - Iannuzzo, Francesco

AU - Smirnova, Liudmila

AU - Wang, Huai

AU - Blaabjerg, Frede

PY - 2015/9/30

Y1 - 2015/9/30

N2 - This paper uses a 6-kA/1.1-kV nondestructive testing system for the analysis of the short-circuit behavior of insulated-gate bipolar transistor (IGBT) power modules. A field-programmable gate array enables the definition of control signals to an accuracy of 10 ns. Multiple 1.7-kV/1-kA IGBT power modules displayed severe divergent oscillations, which were subsequently characterized. Experimental tests indicate that nonnegligible circuit stray inductance plays an important role in the divergent oscillations. In addition, the temperature dependence of the transconductance is proposed as an important element in triggering for the oscillations.

AB - This paper uses a 6-kA/1.1-kV nondestructive testing system for the analysis of the short-circuit behavior of insulated-gate bipolar transistor (IGBT) power modules. A field-programmable gate array enables the definition of control signals to an accuracy of 10 ns. Multiple 1.7-kV/1-kA IGBT power modules displayed severe divergent oscillations, which were subsequently characterized. Experimental tests indicate that nonnegligible circuit stray inductance plays an important role in the divergent oscillations. In addition, the temperature dependence of the transconductance is proposed as an important element in triggering for the oscillations.

KW - Insulated-Gate Bipolar Transistor (IGBT)

KW - Non-destructive Testing

KW - Oscillations

KW - Power Modules

KW - Reliability

KW - Short Circuit

UR - http://www.scopus.com/inward/record.url?scp=84938868100&partnerID=8YFLogxK

U2 - 10.1109/JESTPE.2015.2414448

DO - 10.1109/JESTPE.2015.2414448

M3 - Article

AN - SCOPUS:84938868100

SN - 2168-6777

VL - 3

SP - 756

EP - 765

JO - IEEE Journal of Emerging and Selected Topics in Power Electronics

JF - IEEE Journal of Emerging and Selected Topics in Power Electronics

IS - 3

M1 - 7064726

ER -

Study on Oscillations during Short Circuit of MW-Scale IGBT Power Modules by Means of a 6-kA/1.1-kV Nondestructive Testing System

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