Study of optical characteristics of cubic GaN grown on GaAs (001) by MOCVD

Xiaoling Sun, Hui Yang, Guohua Li, Lianxi Zheng, Jianbin Li, Yutian Wang, Zhanguo Wang

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4 Scopus citations


We report the optical characterization of the cubic GaN film grown on GaAs (001) by MOCVD. The FWHMs of the PL spectra show that the c-GaN samples have different crystal quality. Raman spectra are used to study the optical phonon modes in the c-GaN epitaxy layer. TO and LO phonon peaks are found at 552 cm-1 and 739 cm-1, respectively. Besides these emissions, we also observe the TOB and LOB phonons attributed to the boundary layer in sample C. The E2 phonon from hexagonal phase can be used to identify the hexagonal phase. Annealed at higher temperature, the boundary layer effect decreases while the quantity of hexagonal phase increases in sample C.

Original languageBritish English
Pages (from-to)225-230
Number of pages6
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Issue number3
StatePublished - Mar 1999


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