Study of ambipolar properties of organic-inorganic CH3NH3PbI3 perovskite for vertical field effect transistor

Kalpana Agrawal; Vinay Gupta; Ritu Srivastava; S. S. Rajput

doi:10.1088/2631-8695/aca746

Study of ambipolar properties of organic-inorganic CH₃NH₃PbI₃ perovskite for vertical field effect transistor

Kalpana Agrawal
, Vinay Gupta
, Ritu Srivastava
, S. S. Rajput

Physics

CSIR-National Physical Laboratory Dr. K. S. Krishnan Marg

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A vertical field effect transistor (VFET) with short channel length of 120 nm, fabricated using organic-inorganic perovskite (CH₃NH₃PbI₃) material shows the ambipolar properties and switches from P mode to N mode or vice versa, just by changing the polarity of applied bias. The operating voltage is as low as 0.5 V, which allows it to be integrated with solar cell devices and hence having the possibility of battery less mobile gadgets. To ensure the quality of VFET with CH₃NH₃PbI₃ as a channel length, different parameters have been extracted. The transistor efficiency (TE), mobility (μ _p), and transconductance (g_m) in P mode, have been estimated as 14 V⁻¹, 1.5 cm² V⁻¹ s⁻¹ and 500 ± 150 μS, respectively. For N mode, these parameters have been found to be as 4 V⁻¹, 0.97 cm²V⁻¹ s⁻¹ and 60 ± 10 μS respectively.

Original language	British English
Article number	045040
Journal	Engineering Research Express
Volume	4
Issue number	4
DOIs	https://doi.org/10.1088/2631-8695/aca746
State	Published - Dec 2022

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SDG 7 Affordable and Clean Energy

Keywords

ambipolar
organic-inorganic perovskite (CHNHPbI)
transconductance (g)
transistor efficiency (TE)
vertical field effect transistor (VFET)

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10.1088/2631-8695/aca746

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Cite this

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title = "Study of ambipolar properties of organic-inorganic CH3NH3PbI3 perovskite for vertical field effect transistor",

abstract = "A vertical field effect transistor (VFET) with short channel length of 120 nm, fabricated using organic-inorganic perovskite (CH3NH3PbI3) material shows the ambipolar properties and switches from P mode to N mode or vice versa, just by changing the polarity of applied bias. The operating voltage is as low as 0.5 V, which allows it to be integrated with solar cell devices and hence having the possibility of battery less mobile gadgets. To ensure the quality of VFET with CH3NH3PbI3 as a channel length, different parameters have been extracted. The transistor efficiency (TE), mobility (μ p), and transconductance (gm) in P mode, have been estimated as 14 V−1, 1.5 cm2 V−1 s−1 and 500 ± 150 μS, respectively. For N mode, these parameters have been found to be as 4 V−1, 0.97 cm2V−1 s−1 and 60 ± 10 μS respectively.",

keywords = "ambipolar, organic-inorganic perovskite (CHNHPbI), transconductance (g), transistor efficiency (TE), vertical field effect transistor (VFET)",

author = "Kalpana Agrawal and Vinay Gupta and Ritu Srivastava and Rajput, \{S. S.\}",

note = "Funding Information: The authors are thankful to the Department of Science and Technology (DST), Government of India for the financial support under the WOSA-A scheme (SR/WOS-A/ET-101/2018). The authors are also grateful to CSIR-NPL, New Delhi, for providing lab facilities. Funding Information: The authors are thankful to the Department of Science and Technology (DST), Government of India for the financial support under the WOSA-A scheme (SR/WOS-A/ET-101/2018). The authors are also grateful to CSIR-NPL, New Delhi, for providing lab facilities. Publisher Copyright: {\textcopyright} 2022 IOP Publishing Ltd",

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doi = "10.1088/2631-8695/aca746",

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AU - Agrawal, Kalpana

AU - Gupta, Vinay

AU - Srivastava, Ritu

AU - Rajput, S. S.

N1 - Funding Information: The authors are thankful to the Department of Science and Technology (DST), Government of India for the financial support under the WOSA-A scheme (SR/WOS-A/ET-101/2018). The authors are also grateful to CSIR-NPL, New Delhi, for providing lab facilities. Funding Information: The authors are thankful to the Department of Science and Technology (DST), Government of India for the financial support under the WOSA-A scheme (SR/WOS-A/ET-101/2018). The authors are also grateful to CSIR-NPL, New Delhi, for providing lab facilities. Publisher Copyright: © 2022 IOP Publishing Ltd

PY - 2022/12

Y1 - 2022/12

N2 - A vertical field effect transistor (VFET) with short channel length of 120 nm, fabricated using organic-inorganic perovskite (CH3NH3PbI3) material shows the ambipolar properties and switches from P mode to N mode or vice versa, just by changing the polarity of applied bias. The operating voltage is as low as 0.5 V, which allows it to be integrated with solar cell devices and hence having the possibility of battery less mobile gadgets. To ensure the quality of VFET with CH3NH3PbI3 as a channel length, different parameters have been extracted. The transistor efficiency (TE), mobility (μ p), and transconductance (gm) in P mode, have been estimated as 14 V−1, 1.5 cm2 V−1 s−1 and 500 ± 150 μS, respectively. For N mode, these parameters have been found to be as 4 V−1, 0.97 cm2V−1 s−1 and 60 ± 10 μS respectively.

AB - A vertical field effect transistor (VFET) with short channel length of 120 nm, fabricated using organic-inorganic perovskite (CH3NH3PbI3) material shows the ambipolar properties and switches from P mode to N mode or vice versa, just by changing the polarity of applied bias. The operating voltage is as low as 0.5 V, which allows it to be integrated with solar cell devices and hence having the possibility of battery less mobile gadgets. To ensure the quality of VFET with CH3NH3PbI3 as a channel length, different parameters have been extracted. The transistor efficiency (TE), mobility (μ p), and transconductance (gm) in P mode, have been estimated as 14 V−1, 1.5 cm2 V−1 s−1 and 500 ± 150 μS, respectively. For N mode, these parameters have been found to be as 4 V−1, 0.97 cm2V−1 s−1 and 60 ± 10 μS respectively.

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KW - organic-inorganic perovskite (CHNHPbI)

KW - transconductance (g)

KW - transistor efficiency (TE)

KW - vertical field effect transistor (VFET)

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