TY - JOUR
T1 - Study of ambipolar properties of organic-inorganic CH3NH3PbI3 perovskite for vertical field effect transistor
AU - Agrawal, Kalpana
AU - Gupta, Vinay
AU - Srivastava, Ritu
AU - Rajput, S. S.
N1 - Funding Information:
The authors are thankful to the Department of Science and Technology (DST), Government of India for the financial support under the WOSA-A scheme (SR/WOS-A/ET-101/2018). The authors are also grateful to CSIR-NPL, New Delhi, for providing lab facilities.
Funding Information:
The authors are thankful to the Department of Science and Technology (DST), Government of India for the financial support under the WOSA-A scheme (SR/WOS-A/ET-101/2018). The authors are also grateful to CSIR-NPL, New Delhi, for providing lab facilities.
Publisher Copyright:
© 2022 IOP Publishing Ltd
PY - 2022/12
Y1 - 2022/12
N2 - A vertical field effect transistor (VFET) with short channel length of 120 nm, fabricated using organic-inorganic perovskite (CH3NH3PbI3) material shows the ambipolar properties and switches from P mode to N mode or vice versa, just by changing the polarity of applied bias. The operating voltage is as low as 0.5 V, which allows it to be integrated with solar cell devices and hence having the possibility of battery less mobile gadgets. To ensure the quality of VFET with CH3NH3PbI3 as a channel length, different parameters have been extracted. The transistor efficiency (TE), mobility (μ p), and transconductance (gm) in P mode, have been estimated as 14 V−1, 1.5 cm2 V−1 s−1 and 500 ± 150 μS, respectively. For N mode, these parameters have been found to be as 4 V−1, 0.97 cm2V−1 s−1 and 60 ± 10 μS respectively.
AB - A vertical field effect transistor (VFET) with short channel length of 120 nm, fabricated using organic-inorganic perovskite (CH3NH3PbI3) material shows the ambipolar properties and switches from P mode to N mode or vice versa, just by changing the polarity of applied bias. The operating voltage is as low as 0.5 V, which allows it to be integrated with solar cell devices and hence having the possibility of battery less mobile gadgets. To ensure the quality of VFET with CH3NH3PbI3 as a channel length, different parameters have been extracted. The transistor efficiency (TE), mobility (μ p), and transconductance (gm) in P mode, have been estimated as 14 V−1, 1.5 cm2 V−1 s−1 and 500 ± 150 μS, respectively. For N mode, these parameters have been found to be as 4 V−1, 0.97 cm2V−1 s−1 and 60 ± 10 μS respectively.
KW - ambipolar
KW - organic-inorganic perovskite (CHNHPbI)
KW - transconductance (g)
KW - transistor efficiency (TE)
KW - vertical field effect transistor (VFET)
UR - http://www.scopus.com/inward/record.url?scp=85145665146&partnerID=8YFLogxK
U2 - 10.1088/2631-8695/aca746
DO - 10.1088/2631-8695/aca746
M3 - Article
AN - SCOPUS:85145665146
SN - 2631-8695
VL - 4
JO - Engineering Research Express
JF - Engineering Research Express
IS - 4
M1 - 045040
ER -