Study of ambipolar properties of organic-inorganic CH3NH3PbI3 perovskite for vertical field effect transistor

Kalpana Agrawal, Vinay Gupta, Ritu Srivastava, S. S. Rajput

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A vertical field effect transistor (VFET) with short channel length of 120 nm, fabricated using organic-inorganic perovskite (CH3NH3PbI3) material shows the ambipolar properties and switches from P mode to N mode or vice versa, just by changing the polarity of applied bias. The operating voltage is as low as 0.5 V, which allows it to be integrated with solar cell devices and hence having the possibility of battery less mobile gadgets. To ensure the quality of VFET with CH3NH3PbI3 as a channel length, different parameters have been extracted. The transistor efficiency (TE), mobility (μ p), and transconductance (gm) in P mode, have been estimated as 14 V−1, 1.5 cm2 V−1 s−1 and 500 ± 150 μS, respectively. For N mode, these parameters have been found to be as 4 V−1, 0.97 cm2V−1 s−1 and 60 ± 10 μS respectively.

Original languageBritish English
Article number045040
JournalEngineering Research Express
Volume4
Issue number4
DOIs
StatePublished - Dec 2022

Keywords

  • ambipolar
  • organic-inorganic perovskite (CHNHPbI)
  • transconductance (g)
  • transistor efficiency (TE)
  • vertical field effect transistor (VFET)

Fingerprint

Dive into the research topics of 'Study of ambipolar properties of organic-inorganic CH3NH3PbI3 perovskite for vertical field effect transistor'. Together they form a unique fingerprint.

Cite this