TY - JOUR
T1 - Structural, microstructural, optical and electrical properties of spray deposited rare-earth metal (Sm) ions doped CdO thin films
AU - Velusamy, P.
AU - Babu, R. Ramesh
AU - Ramamurthi, K.
AU - Viegas, J.
AU - Elangovan, E.
N1 - Funding Information:
The author, P. Velusamy sincerely acknowledge the Bharathidasan University, Tiruchirappalli-620 024 for the financial support provided to carry out this work under the University Research Fellowship Scheme (URF-Ref. No. 47363/Ph.D1/2010). The authors thank Dr. Vasant Sathe, UGC-DAE-CSR, Indore for micro Raman analysis. The author E. Elangovan thanks Mike Tiner and Mustapha Jouiad from Microscopic Suite of Masdar Institute for the facilities (XRD and SEM) and their knowledge transfer.
Publisher Copyright:
© 2015, Springer Science+Business Media New York.
PY - 2015/6/1
Y1 - 2015/6/1
N2 - Rare-earth metal, samarium (Sm) ions, doped cadmium oxide (CdO) thin films were deposited on microscopic glass substrates at 300 °C by a homemade spray pyrolysis experimental setup. The deposited films were characterized for their structural, microstructural, optical and electrical properties. X-ray diffraction analysis confirmed that the deposited films belong to the cubic crystal system. The undoped films show a slight preferential growth along (111) diffraction plane, and the (200) plane emerged as the preferential growth direction when the Sm-doping is higher than 0.75 wt%. Field emission scanning electron microscopy analysis reveals that the average grain size and surface morphology of CdO films are effectively modified by various Sm-doping concentration. The elemental composition of the deposited films was analyzed using energy dispersive spectroscopy. The metal oxide (Cd–O) bond vibrations were observed at 319, 389, 551,779 and 941 cm−1 by micro-Raman studies at room temperature. Oxidation state of Sm3+ was confirmed by X-ray photoelectron spectroscopy analysis. A transmittance (ranging 83–86 %) in the visible and NIR region was observed for the various Sm concentrations. The optical band gap estimated varies between 2.39 and 2.67 eV, depending on the Sm-doping concentration. The negative sign of Hall coefficient confirmed the n-type conductivity and the mobility and carrier concentration are in the 45–78 cm2/V s, and 1.0 × 1020–3.36 × 1020 cm−3 range respectively.
AB - Rare-earth metal, samarium (Sm) ions, doped cadmium oxide (CdO) thin films were deposited on microscopic glass substrates at 300 °C by a homemade spray pyrolysis experimental setup. The deposited films were characterized for their structural, microstructural, optical and electrical properties. X-ray diffraction analysis confirmed that the deposited films belong to the cubic crystal system. The undoped films show a slight preferential growth along (111) diffraction plane, and the (200) plane emerged as the preferential growth direction when the Sm-doping is higher than 0.75 wt%. Field emission scanning electron microscopy analysis reveals that the average grain size and surface morphology of CdO films are effectively modified by various Sm-doping concentration. The elemental composition of the deposited films was analyzed using energy dispersive spectroscopy. The metal oxide (Cd–O) bond vibrations were observed at 319, 389, 551,779 and 941 cm−1 by micro-Raman studies at room temperature. Oxidation state of Sm3+ was confirmed by X-ray photoelectron spectroscopy analysis. A transmittance (ranging 83–86 %) in the visible and NIR region was observed for the various Sm concentrations. The optical band gap estimated varies between 2.39 and 2.67 eV, depending on the Sm-doping concentration. The negative sign of Hall coefficient confirmed the n-type conductivity and the mobility and carrier concentration are in the 45–78 cm2/V s, and 1.0 × 1020–3.36 × 1020 cm−3 range respectively.
UR - http://www.scopus.com/inward/record.url?scp=84939951466&partnerID=8YFLogxK
U2 - 10.1007/s10854-015-2960-0
DO - 10.1007/s10854-015-2960-0
M3 - Article
AN - SCOPUS:84939951466
SN - 0957-4522
VL - 26
SP - 4152
EP - 4164
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 6
ER -