Strong impact of x-ray radiation associated with electron beam metallization of diamond devices

C. Hordequin; D. Tromson; A. Brambilla; P. Bergonzo; F. Foulon

doi:10.1063/1.1338515

Strong impact of x-ray radiation associated with electron beam metallization of diamond devices

C. Hordequin
, D. Tromson
, A. Brambilla
, P. Bergonzo
, F. Foulon

Centre d'Etudes Nucléaires de Saclay

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Electron-beam evaporation of metal contact is commonly used in the fabrication of semiconductor devices. We have observed that device irradiation by x-ray photons, which are generated by electrons striking the metal (titanium or gold) to be evaporated, has a strong impact on the characteristics of diamond devices used for radiation detection. It results in an improvement of the detector charge collection efficiency by a factor of 1.5 with respect to nonirradiated devices (standard thermal evaporation). Thermally stimulated current measurements showed that this effect is related to deep trap filling by free carriers generated in diamond by x-ray photons impinging the device during e-beam evaporation. Trap filling results in an increase of the free carrier drift distance before trapping. Study of contact annealing and the thermal stability of trap filling showed that charge detrapping at temperatures above 200°C annihilates the observed detector sensitivity improvement.

Original language	British English
Pages (from-to)	2533-2537
Number of pages	5
Journal	Journal of Applied Physics
Volume	90
Issue number	5
DOIs	https://doi.org/10.1063/1.1338515
State	Published - 1 Sep 2001

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title = "Strong impact of x-ray radiation associated with electron beam metallization of diamond devices",

abstract = "Electron-beam evaporation of metal contact is commonly used in the fabrication of semiconductor devices. We have observed that device irradiation by x-ray photons, which are generated by electrons striking the metal (titanium or gold) to be evaporated, has a strong impact on the characteristics of diamond devices used for radiation detection. It results in an improvement of the detector charge collection efficiency by a factor of 1.5 with respect to nonirradiated devices (standard thermal evaporation). Thermally stimulated current measurements showed that this effect is related to deep trap filling by free carriers generated in diamond by x-ray photons impinging the device during e-beam evaporation. Trap filling results in an increase of the free carrier drift distance before trapping. Study of contact annealing and the thermal stability of trap filling showed that charge detrapping at temperatures above 200°C annihilates the observed detector sensitivity improvement.",

author = "C. Hordequin and D. Tromson and A. Brambilla and P. Bergonzo and F. Foulon",

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TY - JOUR

T1 - Strong impact of x-ray radiation associated with electron beam metallization of diamond devices

AU - Hordequin, C.

AU - Tromson, D.

AU - Brambilla, A.

AU - Bergonzo, P.

AU - Foulon, F.

PY - 2001/9/1

Y1 - 2001/9/1

N2 - Electron-beam evaporation of metal contact is commonly used in the fabrication of semiconductor devices. We have observed that device irradiation by x-ray photons, which are generated by electrons striking the metal (titanium or gold) to be evaporated, has a strong impact on the characteristics of diamond devices used for radiation detection. It results in an improvement of the detector charge collection efficiency by a factor of 1.5 with respect to nonirradiated devices (standard thermal evaporation). Thermally stimulated current measurements showed that this effect is related to deep trap filling by free carriers generated in diamond by x-ray photons impinging the device during e-beam evaporation. Trap filling results in an increase of the free carrier drift distance before trapping. Study of contact annealing and the thermal stability of trap filling showed that charge detrapping at temperatures above 200°C annihilates the observed detector sensitivity improvement.

AB - Electron-beam evaporation of metal contact is commonly used in the fabrication of semiconductor devices. We have observed that device irradiation by x-ray photons, which are generated by electrons striking the metal (titanium or gold) to be evaporated, has a strong impact on the characteristics of diamond devices used for radiation detection. It results in an improvement of the detector charge collection efficiency by a factor of 1.5 with respect to nonirradiated devices (standard thermal evaporation). Thermally stimulated current measurements showed that this effect is related to deep trap filling by free carriers generated in diamond by x-ray photons impinging the device during e-beam evaporation. Trap filling results in an increase of the free carrier drift distance before trapping. Study of contact annealing and the thermal stability of trap filling showed that charge detrapping at temperatures above 200°C annihilates the observed detector sensitivity improvement.

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U2 - 10.1063/1.1338515

DO - 10.1063/1.1338515

M3 - Article

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SN - 0021-8979

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SP - 2533

EP - 2537

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Strong impact of x-ray radiation associated with electron beam metallization of diamond devices

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