Strain state measurement of InyGa1-yAs/AlzGa1-zAs/GaAs/Alz Ga1-zAs double barrier quantum well material grown on InxGa1-xAs buffer layer

Xiaojun Wang; Lianxi Zheng; Zhibo Xiao; Yutian Wang; Xiongwei Hu; Qiming Wang

Strain state measurement of In_yGa_1-yAs/Al_zGa_1-zAs/GaAs/Al_z Ga_1-zAs double barrier quantum well material grown on In_xGa_1-xAs buffer layer

Xiaojun Wang, Lianxi Zheng, Zhibo Xiao, Yutian Wang, Xiongwei Hu, Qiming Wang

Mechanical & Nuclear Engineering

Institute of Semiconductors Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

A multiple-step-growth method was used in the MOCVD growth of thick In_xGa_1-xAs buffer layer on GaAs substrate. In_yGa_1-yAs/Al_zGa_-z As/GaAs/Al_zGa_1-zAs double barrier quantum well material grown on this In_xGa_1-xAs buffer layer was obtained. The material shows good crystal quality and also good optical characteristics. By double crystal X-diffraction method and also a TEM measurement, the strain quantities of each thin layers in the sample and all the structure parameters were gotten. Based on these results, we explained the optical properties of this sample well.

Original language	British English
Pages (from-to)	85-90
Number of pages	6
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	18
Issue number	2
State	Published - Feb 1997

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title = "Strain state measurement of InyGa1-yAs/AlzGa1-zAs/GaAs/Alz Ga1-zAs double barrier quantum well material grown on InxGa1-xAs buffer layer",

abstract = "A multiple-step-growth method was used in the MOCVD growth of thick InxGa1-xAs buffer layer on GaAs substrate. InyGa1-yAs/AlzGa-z As/GaAs/AlzGa1-zAs double barrier quantum well material grown on this InxGa1-xAs buffer layer was obtained. The material shows good crystal quality and also good optical characteristics. By double crystal X-diffraction method and also a TEM measurement, the strain quantities of each thin layers in the sample and all the structure parameters were gotten. Based on these results, we explained the optical properties of this sample well.",

author = "Xiaojun Wang and Lianxi Zheng and Zhibo Xiao and Yutian Wang and Xiongwei Hu and Qiming Wang",

year = "1997",

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issn = "0253-4177",

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TY - JOUR

T1 - Strain state measurement of InyGa1-yAs/AlzGa1-zAs/GaAs/Alz Ga1-zAs double barrier quantum well material grown on InxGa1-xAs buffer layer

AU - Wang, Xiaojun

AU - Zheng, Lianxi

AU - Xiao, Zhibo

AU - Wang, Yutian

AU - Hu, Xiongwei

AU - Wang, Qiming

PY - 1997/2

Y1 - 1997/2

N2 - A multiple-step-growth method was used in the MOCVD growth of thick InxGa1-xAs buffer layer on GaAs substrate. InyGa1-yAs/AlzGa-z As/GaAs/AlzGa1-zAs double barrier quantum well material grown on this InxGa1-xAs buffer layer was obtained. The material shows good crystal quality and also good optical characteristics. By double crystal X-diffraction method and also a TEM measurement, the strain quantities of each thin layers in the sample and all the structure parameters were gotten. Based on these results, we explained the optical properties of this sample well.

AB - A multiple-step-growth method was used in the MOCVD growth of thick InxGa1-xAs buffer layer on GaAs substrate. InyGa1-yAs/AlzGa-z As/GaAs/AlzGa1-zAs double barrier quantum well material grown on this InxGa1-xAs buffer layer was obtained. The material shows good crystal quality and also good optical characteristics. By double crystal X-diffraction method and also a TEM measurement, the strain quantities of each thin layers in the sample and all the structure parameters were gotten. Based on these results, we explained the optical properties of this sample well.

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M3 - Article

AN - SCOPUS:0031070507

SN - 0253-4177

VL - 18

SP - 85

EP - 90

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 2

ER -

Strain state measurement of In_yGa_1-yAs/Al_zGa_1-zAs/GaAs/Al_z Ga_1-zAs double barrier quantum well material grown on In_xGa_1-xAs buffer layer

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