Strain-induced electronic energy changes in multilayered InGaAs/GaAs quantum wire structures

Zhixun Ma; Todd Holden; Zhiming M. Wang; Gregory J. Salamo; Lyudmila Malikova; Samuel S. Mao

doi:10.1063/1.2437574

Strain-induced electronic energy changes in multilayered InGaAs/GaAs quantum wire structures

Zhixun Ma, Todd Holden, Zhiming M. Wang, Gregory J. Salamo, Lyudmila Malikova, Samuel S. Mao

Mechanical & Nuclear Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Electronic states of layered InGaAsGaAs (001) quantum wire and quantum dot chain structures have been investigated by electroreflectance and surface photovoltage spectroscopy. Band-gap shrinkage and heavy-hole/light-hole state splitting have been observed in the GaAs barrier material. This can be understood by shear strain existing in the GaAs barrier due to strain relaxation and anisotropy within the wires or dot chains. By comparing the experimental results with theoretical calculations, we found that the strain relaxation in the direction perpendicular to the wires or the dot chains has a stronger effect on the heavy-hole-light-hole splitting than on band-gap modification in the InGaAs wires and dot chains. The piezoelectric field induced by the shear strain is also discussed.

Original language	British English
Article number	044305
Journal	Journal of Applied Physics
Volume	101
Issue number	4
DOIs	https://doi.org/10.1063/1.2437574
State	Published - 2007

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@article{1e83cffc1cfa4df084aa9340697bbd65,

title = "Strain-induced electronic energy changes in multilayered InGaAs/GaAs quantum wire structures",

abstract = "Electronic states of layered InGaAsGaAs (001) quantum wire and quantum dot chain structures have been investigated by electroreflectance and surface photovoltage spectroscopy. Band-gap shrinkage and heavy-hole/light-hole state splitting have been observed in the GaAs barrier material. This can be understood by shear strain existing in the GaAs barrier due to strain relaxation and anisotropy within the wires or dot chains. By comparing the experimental results with theoretical calculations, we found that the strain relaxation in the direction perpendicular to the wires or the dot chains has a stronger effect on the heavy-hole-light-hole splitting than on band-gap modification in the InGaAs wires and dot chains. The piezoelectric field induced by the shear strain is also discussed.",

author = "Zhixun Ma and Todd Holden and Wang, \{Zhiming M.\} and Salamo, \{Gregory J.\} and Lyudmila Malikova and Mao, \{Samuel S.\}",

note = "Funding Information: The authors wish to acknowledge the National Science Foundation and the Department of Energy for financial support.",

year = "2007",

doi = "10.1063/1.2437574",

language = "British English",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Strain-induced electronic energy changes in multilayered InGaAs/GaAs quantum wire structures

AU - Ma, Zhixun

AU - Holden, Todd

AU - Wang, Zhiming M.

AU - Salamo, Gregory J.

AU - Malikova, Lyudmila

AU - Mao, Samuel S.

N1 - Funding Information: The authors wish to acknowledge the National Science Foundation and the Department of Energy for financial support.

PY - 2007

Y1 - 2007

N2 - Electronic states of layered InGaAsGaAs (001) quantum wire and quantum dot chain structures have been investigated by electroreflectance and surface photovoltage spectroscopy. Band-gap shrinkage and heavy-hole/light-hole state splitting have been observed in the GaAs barrier material. This can be understood by shear strain existing in the GaAs barrier due to strain relaxation and anisotropy within the wires or dot chains. By comparing the experimental results with theoretical calculations, we found that the strain relaxation in the direction perpendicular to the wires or the dot chains has a stronger effect on the heavy-hole-light-hole splitting than on band-gap modification in the InGaAs wires and dot chains. The piezoelectric field induced by the shear strain is also discussed.

AB - Electronic states of layered InGaAsGaAs (001) quantum wire and quantum dot chain structures have been investigated by electroreflectance and surface photovoltage spectroscopy. Band-gap shrinkage and heavy-hole/light-hole state splitting have been observed in the GaAs barrier material. This can be understood by shear strain existing in the GaAs barrier due to strain relaxation and anisotropy within the wires or dot chains. By comparing the experimental results with theoretical calculations, we found that the strain relaxation in the direction perpendicular to the wires or the dot chains has a stronger effect on the heavy-hole-light-hole splitting than on band-gap modification in the InGaAs wires and dot chains. The piezoelectric field induced by the shear strain is also discussed.

UR - https://www.scopus.com/pages/publications/33847629953

U2 - 10.1063/1.2437574

DO - 10.1063/1.2437574

M3 - Article

AN - SCOPUS:33847629953

SN - 0021-8979

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 044305

ER -

Strain-induced electronic energy changes in multilayered InGaAs/GaAs quantum wire structures

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