Strain enhanced high efficiency germanium photodetectors in the near infrared for integration with Si

Ali K. Okyay; Ammar M. Nayfeh; Krishna C. Saraswat; Nevran Ozguven; Ann Marshall; Paul C. McIntyre; Takao Yonehara

doi:10.1109/LEOS.2006.279214

Strain enhanced high efficiency germanium photodetectors in the near infrared for integration with Si

Ali K. Okyay
, Ammar M. Nayfeh
, Krishna C. Saraswat
, Nevran Ozguven
, Ann Marshall
, Paul C. McIntyre
, Takao Yonehara

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

Germanium-on-silicon photodetectors with responsivities as high as 0.85A/W at 1550nm that exhibit dark currents of 100mA/cm² and external efficiency up to 68% are demonstrated. Strain in the Ge film was determined to be 0.16%, reducing the optical bandgap by ∼12meV, resulting in a ∼20nm red shift at the absorption edge.

Original language	British English
Title of host publication	19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	460-461
Number of pages	2
ISBN (Print)	0780395557, 9780780395558
DOIs	https://doi.org/10.1109/LEOS.2006.279214
State	Published - 2006
Event	19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS - Montreal, QC, Canada Duration: 29 Oct 2006 → 2 Nov 2006

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN (Print)	1092-8081

Conference

Conference	19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS
Country/Territory	Canada
City	Montreal, QC
Period	29/10/06 → 2/11/06

Access to Document

10.1109/LEOS.2006.279214

Cite this

Okyay, A. K., Nayfeh, A. M., Saraswat, K. C., Ozguven, N., Marshall, A., McIntyre, P. C., & Yonehara, T. (2006). Strain enhanced high efficiency germanium photodetectors in the near infrared for integration with Si. In 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS (pp. 460-461). Article 4054256 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LEOS.2006.279214

Okyay, Ali K. ; Nayfeh, Ammar M. ; Saraswat, Krishna C. et al. / Strain enhanced high efficiency germanium photodetectors in the near infrared for integration with Si. 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS. Institute of Electrical and Electronics Engineers Inc., 2006. pp. 460-461 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS).

@inproceedings{15b26315a8104836b68041ca8eaf4084,

title = "Strain enhanced high efficiency germanium photodetectors in the near infrared for integration with Si",

abstract = "Germanium-on-silicon photodetectors with responsivities as high as 0.85A/W at 1550nm that exhibit dark currents of 100mA/cm2 and external efficiency up to 68\% are demonstrated. Strain in the Ge film was determined to be 0.16\%, reducing the optical bandgap by ∼12meV, resulting in a ∼20nm red shift at the absorption edge.",

author = "Okyay, \{Ali K.\} and Nayfeh, \{Ammar M.\} and Saraswat, \{Krishna C.\} and Nevran Ozguven and Ann Marshall and McIntyre, \{Paul C.\} and Takao Yonehara",

year = "2006",

doi = "10.1109/LEOS.2006.279214",

language = "British English",

isbn = "0780395557",

series = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "460--461",

booktitle = "19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS",

address = "United States",

note = "19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS ; Conference date: 29-10-2006 Through 02-11-2006",

}

Okyay, AK, Nayfeh, AM, Saraswat, KC, Ozguven, N, Marshall, A, McIntyre, PC & Yonehara, T 2006, Strain enhanced high efficiency germanium photodetectors in the near infrared for integration with Si. in 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS., 4054256, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Institute of Electrical and Electronics Engineers Inc., pp. 460-461, 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS, Montreal, QC, Canada, 29/10/06. https://doi.org/10.1109/LEOS.2006.279214

Strain enhanced high efficiency germanium photodetectors in the near infrared for integration with Si. / Okyay, Ali K.; Nayfeh, Ammar M.; Saraswat, Krishna C. et al.
19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS. Institute of Electrical and Electronics Engineers Inc., 2006. p. 460-461 4054256 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Okyay, Ali K.

AU - Nayfeh, Ammar M.

AU - Saraswat, Krishna C.

AU - Ozguven, Nevran

AU - Marshall, Ann

AU - McIntyre, Paul C.

AU - Yonehara, Takao

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AB - Germanium-on-silicon photodetectors with responsivities as high as 0.85A/W at 1550nm that exhibit dark currents of 100mA/cm2 and external efficiency up to 68% are demonstrated. Strain in the Ge film was determined to be 0.16%, reducing the optical bandgap by ∼12meV, resulting in a ∼20nm red shift at the absorption edge.

UR - https://www.scopus.com/pages/publications/39049130684

U2 - 10.1109/LEOS.2006.279214

DO - 10.1109/LEOS.2006.279214

M3 - Conference contribution

AN - SCOPUS:39049130684

SN - 0780395557

SN - 9780780395558

T3 - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

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BT - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS

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Y2 - 29 October 2006 through 2 November 2006

ER -

Okyay AK, Nayfeh AM, Saraswat KC, Ozguven N, Marshall A, McIntyre PC et al. Strain enhanced high efficiency germanium photodetectors in the near infrared for integration with Si. In 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS. Institute of Electrical and Electronics Engineers Inc. 2006. p. 460-461. 4054256. (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). doi: 10.1109/LEOS.2006.279214

Strain enhanced high efficiency germanium photodetectors in the near infrared for integration with Si

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