@inproceedings{15b26315a8104836b68041ca8eaf4084,
title = "Strain enhanced high efficiency germanium photodetectors in the near infrared for integration with Si",
abstract = "Germanium-on-silicon photodetectors with responsivities as high as 0.85A/W at 1550nm that exhibit dark currents of 100mA/cm2 and external efficiency up to 68% are demonstrated. Strain in the Ge film was determined to be 0.16%, reducing the optical bandgap by ∼12meV, resulting in a ∼20nm red shift at the absorption edge.",
author = "Okyay, {Ali K.} and Nayfeh, {Ammar M.} and Saraswat, {Krishna C.} and Nevran Ozguven and Ann Marshall and McIntyre, {Paul C.} and Takao Yonehara",
year = "2006",
doi = "10.1109/LEOS.2006.279214",
language = "British English",
isbn = "0780395557",
series = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "460--461",
booktitle = "19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS",
address = "United States",
note = "19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS ; Conference date: 29-10-2006 Through 02-11-2006",
}