Strain and photoluminescence characterization of cubic (In,Ga) N films grown on GaAs(001) substrates

X. L. Sun; Y. T. Wang; Hui Yang; L. X. Zheng; D. P. Xu; J. B. Li; Z. G. Wang

doi:10.1063/1.372405

Strain and photoluminescence characterization of cubic (In,Ga) N films grown on GaAs(001) substrates

X. L. Sun, Y. T. Wang, Hui Yang, L. X. Zheng, D. P. Xu, J. B. Li, Z. G. Wang

Mechanical & Nuclear Engineering

Institute of Semiconductors Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Cubic In_xGa_1-xN films were successfully grown on GaAs(001) substrates by metalorganic chemical-vapor deposition. The values of A: content ranging from 0.10 to 0.24 obtained at different growth conditions were measured by double-crystal x-ray diffraction (XRD). The perpendicular and parallel elastic strain of the In_0.2Ga_0.8N layer, ε_⊥ = 0.4% and ε_∥y=-0.4% for GaN and ε _⊥ = 0.37% and ε _∥=-0.37% for InGaN, respectively, were derived using the XRD measurements. The inhomogeneous strain and the average grain size of the In_0.2Ga_0.8N/GaN films were also studied by XRD. Photoluminescence spectra were used to measure the optical characterization of the In_xGa_1-xN thin films with different In composition, and the near-band-edge emission dependence of cubic In_xGa_1-xN on the x value is nearly linear with In content x≤0.24.

Original language	British English
Pages (from-to)	3711-3714
Number of pages	4
Journal	Journal of Applied Physics
Volume	87
Issue number	8
DOIs	https://doi.org/10.1063/1.372405
State	Published - 15 Apr 2000

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@article{5e025355407b4ed4ae0dfb885f7b38e9,

title = "Strain and photoluminescence characterization of cubic (In,Ga) N films grown on GaAs(001) substrates",

abstract = "Cubic InxGa1-xN films were successfully grown on GaAs(001) substrates by metalorganic chemical-vapor deposition. The values of A: content ranging from 0.10 to 0.24 obtained at different growth conditions were measured by double-crystal x-ray diffraction (XRD). The perpendicular and parallel elastic strain of the In0.2Ga0.8N layer, ε⊥ = 0.4% and ε∥y=-0.4% for GaN and ε ⊥ = 0.37% and ε ∥=-0.37% for InGaN, respectively, were derived using the XRD measurements. The inhomogeneous strain and the average grain size of the In0.2Ga0.8N/GaN films were also studied by XRD. Photoluminescence spectra were used to measure the optical characterization of the InxGa1-xN thin films with different In composition, and the near-band-edge emission dependence of cubic InxGa1-xN on the x value is nearly linear with In content x≤0.24.",

author = "Sun, {X. L.} and Wang, {Y. T.} and Hui Yang and Zheng, {L. X.} and Xu, {D. P.} and Li, {J. B.} and Wang, {Z. G.}",

year = "2000",

month = apr,

day = "15",

doi = "10.1063/1.372405",

language = "British English",

volume = "87",

pages = "3711--3714",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Strain and photoluminescence characterization of cubic (In,Ga) N films grown on GaAs(001) substrates

AU - Sun, X. L.

AU - Wang, Y. T.

AU - Yang, Hui

AU - Zheng, L. X.

AU - Xu, D. P.

AU - Li, J. B.

AU - Wang, Z. G.

PY - 2000/4/15

Y1 - 2000/4/15

N2 - Cubic InxGa1-xN films were successfully grown on GaAs(001) substrates by metalorganic chemical-vapor deposition. The values of A: content ranging from 0.10 to 0.24 obtained at different growth conditions were measured by double-crystal x-ray diffraction (XRD). The perpendicular and parallel elastic strain of the In0.2Ga0.8N layer, ε⊥ = 0.4% and ε∥y=-0.4% for GaN and ε ⊥ = 0.37% and ε ∥=-0.37% for InGaN, respectively, were derived using the XRD measurements. The inhomogeneous strain and the average grain size of the In0.2Ga0.8N/GaN films were also studied by XRD. Photoluminescence spectra were used to measure the optical characterization of the InxGa1-xN thin films with different In composition, and the near-band-edge emission dependence of cubic InxGa1-xN on the x value is nearly linear with In content x≤0.24.

AB - Cubic InxGa1-xN films were successfully grown on GaAs(001) substrates by metalorganic chemical-vapor deposition. The values of A: content ranging from 0.10 to 0.24 obtained at different growth conditions were measured by double-crystal x-ray diffraction (XRD). The perpendicular and parallel elastic strain of the In0.2Ga0.8N layer, ε⊥ = 0.4% and ε∥y=-0.4% for GaN and ε ⊥ = 0.37% and ε ∥=-0.37% for InGaN, respectively, were derived using the XRD measurements. The inhomogeneous strain and the average grain size of the In0.2Ga0.8N/GaN films were also studied by XRD. Photoluminescence spectra were used to measure the optical characterization of the InxGa1-xN thin films with different In composition, and the near-band-edge emission dependence of cubic InxGa1-xN on the x value is nearly linear with In content x≤0.24.

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U2 - 10.1063/1.372405

DO - 10.1063/1.372405

M3 - Article

AN - SCOPUS:0039806789

SN - 0021-8979

VL - 87

SP - 3711

EP - 3714

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Strain and photoluminescence characterization of cubic (In,Ga) N films grown on GaAs(001) substrates

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