Statistical modeling with the virtual source MOSFET model

Li Yu, Lan Wei, Dimitri Antoniadis, Ibrahim Elfadel, Duane Boning

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

A statistical extension of the ultra-compact Virtual Source (VS) MOSFET model is developed here for the first time. The characterization uses a statistical extraction technique based on the backward propagation of variance (BPV) with variability parameters derived directly from the nominal VS model. The resulting statistical VS model is extensively validated using Monte Carlo simulations, and the statistical distributions of several figures of merit for logic and memory cells are compared with those of a BSIM model from a 40-nm CMOS industrial design kit. The comparisons show almost identical distributions with distinct run time advantages for the statistical VS model. Additional simulations show that the statistical VS model accurately captures non-Gaussian features that are important for low-power designs.

Original languageBritish English
Title of host publicationProceedings - Design, Automation and Test in Europe, DATE 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1454-1457
Number of pages4
ISBN (Print)9783981537000
DOIs
StatePublished - 2013
Event16th Design, Automation and Test in Europe Conference and Exhibition, DATE 2013 - Grenoble, France
Duration: 18 Mar 201322 Mar 2013

Publication series

NameProceedings -Design, Automation and Test in Europe, DATE
ISSN (Print)1530-1591

Conference

Conference16th Design, Automation and Test in Europe Conference and Exhibition, DATE 2013
Country/TerritoryFrance
CityGrenoble
Period18/03/1322/03/13

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