TY - JOUR
T1 - Spray deposited ruthenium incorporated CdO thin films for opto-electronic and gas sensing applications
AU - Velusamy, P.
AU - Ramesh Babu, R.
AU - Ramamurthi, K.
AU - Elangovan, E.
AU - Viegas, J.
AU - Sridharan, M.
N1 - Publisher Copyright:
© 2017 Elsevier Ltd
PY - 2018/1
Y1 - 2018/1
N2 - The ruthenium (Ru) doped CdO thin films were deposited by spray pyrolysis method on glass substrate, with various Ru concentrations (0.1, 0.125, 0.150, 0.175 and 0.2 wt%). The effect of Ru doping concentration on the electrical, optical, structural, microstructural and gas sensing properties was studied by Hall measurement, UV–vis–NIR spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, micro-Raman and chemi-resistivity method. The results obtained show that the carrier mobility, visible-NIR transparency, surface morphology and gas response are effectively tuned by varying Ru doping concentration. The 0.1 wt% Ru doped CdO thin film shows relatively high optical band gap (2.32 eV) and maximum transmittance (70%) in the range between 600 and 900 nm. The high electrical properties (mobility 110 cm2/V⋅s and carrier concentration 1.77 × 1020 cm−3) are obtained for 0.150 wt% Ru doped CdO thin film. The high formaldehyde gas sensitivity (35%), fast response and recovery time are observed for 0.150 wt% Ru doped CdO thin film.
AB - The ruthenium (Ru) doped CdO thin films were deposited by spray pyrolysis method on glass substrate, with various Ru concentrations (0.1, 0.125, 0.150, 0.175 and 0.2 wt%). The effect of Ru doping concentration on the electrical, optical, structural, microstructural and gas sensing properties was studied by Hall measurement, UV–vis–NIR spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, micro-Raman and chemi-resistivity method. The results obtained show that the carrier mobility, visible-NIR transparency, surface morphology and gas response are effectively tuned by varying Ru doping concentration. The 0.1 wt% Ru doped CdO thin film shows relatively high optical band gap (2.32 eV) and maximum transmittance (70%) in the range between 600 and 900 nm. The high electrical properties (mobility 110 cm2/V⋅s and carrier concentration 1.77 × 1020 cm−3) are obtained for 0.150 wt% Ru doped CdO thin film. The high formaldehyde gas sensitivity (35%), fast response and recovery time are observed for 0.150 wt% Ru doped CdO thin film.
KW - Electrical properties
KW - Gas sensing properties
KW - Optical properties
KW - Spray pyrolysis
KW - Structural analysis
UR - http://www.scopus.com/inward/record.url?scp=85029666953&partnerID=8YFLogxK
U2 - 10.1016/j.jpcs.2017.09.019
DO - 10.1016/j.jpcs.2017.09.019
M3 - Article
AN - SCOPUS:85029666953
SN - 0022-3697
VL - 112
SP - 127
EP - 136
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
ER -