Sol-gel synthesis of Cu-doped p-CdS nanoparticles and their analysis as p-CdS/n-ZnO thin film photodiode

Sandeep Arya; Asha Sharma; Bikram Singh; Mohammad Riyas; Pankaj Bandhoria; Mohammad Aatif; Vinay Gupta

doi:10.1016/j.optmat.2018.03.035

Sol-gel synthesis of Cu-doped p-CdS nanoparticles and their analysis as p-CdS/n-ZnO thin film photodiode

Sandeep Arya, Asha Sharma, Bikram Singh, Mohammad Riyas, Pankaj Bandhoria, Mohammad Aatif, Vinay Gupta

Physics

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

Copper (Cu) doped p-CdS nanoparticles have been synthesized via sol-gel method. The as-synthesized nanoparticles were successfully characterized and implemented for fabrication of Glass/ITO/n-ZnO/p-CdS/Al thin film photodiode. The fabricated device is tested for small (−1 V to +1 V) bias voltage. Results verified that the junction leakage current within the dark is very small. During reverse bias condition, the maximum amount of photocurrent is obtained under illumination of 100 μW/cm². Electrical characterizations confirmed that the external quantum efficiency (EQE), gain and responsivity of n-ZnO/p-CdS photodiode show improved photo response than conventional p-type materials for such a small bias voltage. It is therefore revealed that the Cu-doped CdS nanoparticles is an efficient p-type material for fabrication of thin film photo-devices.

Original language	British English
Pages (from-to)	115-119
Number of pages	5
Journal	Optical Materials
Volume	79
DOIs	https://doi.org/10.1016/j.optmat.2018.03.035
State	Published - May 2018

Keywords

Cu-doped CdS nanoparticles
p-CdS/n-ZnO heterojunction
Photo-response
Sol-gel method

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10.1016/j.optmat.2018.03.035

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@article{a05ba680d0144cfda84328d861cd7d68,

title = "Sol-gel synthesis of Cu-doped p-CdS nanoparticles and their analysis as p-CdS/n-ZnO thin film photodiode",

abstract = "Copper (Cu) doped p-CdS nanoparticles have been synthesized via sol-gel method. The as-synthesized nanoparticles were successfully characterized and implemented for fabrication of Glass/ITO/n-ZnO/p-CdS/Al thin film photodiode. The fabricated device is tested for small (−1 V to +1 V) bias voltage. Results verified that the junction leakage current within the dark is very small. During reverse bias condition, the maximum amount of photocurrent is obtained under illumination of 100 μW/cm2. Electrical characterizations confirmed that the external quantum efficiency (EQE), gain and responsivity of n-ZnO/p-CdS photodiode show improved photo response than conventional p-type materials for such a small bias voltage. It is therefore revealed that the Cu-doped CdS nanoparticles is an efficient p-type material for fabrication of thin film photo-devices.",

keywords = "Cu-doped CdS nanoparticles, p-CdS/n-ZnO heterojunction, Photo-response, Sol-gel method",

author = "Sandeep Arya and Asha Sharma and Bikram Singh and Mohammad Riyas and Pankaj Bandhoria and Mohammad Aatif and Vinay Gupta",

note = "Funding Information: This work is supported by SERB-DST (File No. EEQ/2016/000119 ). Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = may,

doi = "10.1016/j.optmat.2018.03.035",

language = "British English",

volume = "79",

pages = "115--119",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Sol-gel synthesis of Cu-doped p-CdS nanoparticles and their analysis as p-CdS/n-ZnO thin film photodiode

AU - Arya, Sandeep

AU - Sharma, Asha

AU - Singh, Bikram

AU - Riyas, Mohammad

AU - Bandhoria, Pankaj

AU - Aatif, Mohammad

AU - Gupta, Vinay

PY - 2018/5

Y1 - 2018/5

N2 - Copper (Cu) doped p-CdS nanoparticles have been synthesized via sol-gel method. The as-synthesized nanoparticles were successfully characterized and implemented for fabrication of Glass/ITO/n-ZnO/p-CdS/Al thin film photodiode. The fabricated device is tested for small (−1 V to +1 V) bias voltage. Results verified that the junction leakage current within the dark is very small. During reverse bias condition, the maximum amount of photocurrent is obtained under illumination of 100 μW/cm2. Electrical characterizations confirmed that the external quantum efficiency (EQE), gain and responsivity of n-ZnO/p-CdS photodiode show improved photo response than conventional p-type materials for such a small bias voltage. It is therefore revealed that the Cu-doped CdS nanoparticles is an efficient p-type material for fabrication of thin film photo-devices.

AB - Copper (Cu) doped p-CdS nanoparticles have been synthesized via sol-gel method. The as-synthesized nanoparticles were successfully characterized and implemented for fabrication of Glass/ITO/n-ZnO/p-CdS/Al thin film photodiode. The fabricated device is tested for small (−1 V to +1 V) bias voltage. Results verified that the junction leakage current within the dark is very small. During reverse bias condition, the maximum amount of photocurrent is obtained under illumination of 100 μW/cm2. Electrical characterizations confirmed that the external quantum efficiency (EQE), gain and responsivity of n-ZnO/p-CdS photodiode show improved photo response than conventional p-type materials for such a small bias voltage. It is therefore revealed that the Cu-doped CdS nanoparticles is an efficient p-type material for fabrication of thin film photo-devices.

KW - Cu-doped CdS nanoparticles

KW - p-CdS/n-ZnO heterojunction

KW - Photo-response

KW - Sol-gel method

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U2 - 10.1016/j.optmat.2018.03.035

DO - 10.1016/j.optmat.2018.03.035

M3 - Article

AN - SCOPUS:85044467864

SN - 0925-3467

VL - 79

SP - 115

EP - 119

JO - Optical Materials

JF - Optical Materials

ER -

Sol-gel synthesis of Cu-doped p-CdS nanoparticles and their analysis as p-CdS/n-ZnO thin film photodiode

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Keywords

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