Single-walled nanotube MIS memory devices

M. Alba-Martin; T. Firmager; J. J. Atherton; M. C. Rosamond; A. J. Gallant; M. C. Petty; A. Al Ghaferi; A. Ayesh; D. Ashall; M. F. Mabrook; D. A. Zeze

doi:10.1109/NANO.2011.6144530

Single-walled nanotube MIS memory devices

M. Alba-Martin, T. Firmager, J. J. Atherton, M. C. Rosamond, A. J. Gallant, M. C. Petty, A. Al Ghaferi, A. Ayesh, D. Ashall, M. F. Mabrook, D. A. Zeze

Mechanical & Nuclear Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Single-Walled carbon nanotubes (SWCNTs) were embedded in hybrid Metal-Insulator-Semiconductor (MIS) memory devices using layer-by-layer (LbL) deposition with polymethylmethacrylate (PMMA) as an organic insulator. It is demonstrated that shortened SWCNTs lead to reliable and large memory windows by virtue of better encapsulation which reduces charge leakage compared with longer SWCNT devices. The capacitance-voltage (C-V) characteristics exhibit a clockwise hysteresis, indicative of electron injection into the SWCNT charge storage elements through the PMMA layer. It is also shown that devices made using sodium dodecyl sulphate (SDS)-based SWCNTs and polyethyleneimine (PEI) produce memory windows larger than 6 V, have a high charge retention of 76% and a storage density better than 2×10 ¹²/ cm ².

Original language	British English
Title of host publication	2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Pages	991-995
Number of pages	5
DOIs	https://doi.org/10.1109/NANO.2011.6144530
State	Published - 2011
Event	2011 11th IEEE International Conference on Nanotechnology, NANO 2011 - Portland, OR, United States Duration: 15 Aug 2011 → 19 Aug 2011

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Country/Territory	United States
City	Portland, OR
Period	15/08/11 → 19/08/11

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10.1109/NANO.2011.6144530

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Alba-Martin, M., Firmager, T., Atherton, J. J., Rosamond, M. C., Gallant, A. J., Petty, M. C., Al Ghaferi, A., Ayesh, A., Ashall, D., Mabrook, M. F., & Zeze, D. A. (2011). Single-walled nanotube MIS memory devices. In 2011 11th IEEE International Conference on Nanotechnology, NANO 2011 (pp. 991-995). Article 6144530 (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2011.6144530

@inproceedings{d1b9f0c3bd4f40d89ab57a4bbb1aed6a,

title = "Single-walled nanotube MIS memory devices",

abstract = "Single-Walled carbon nanotubes (SWCNTs) were embedded in hybrid Metal-Insulator-Semiconductor (MIS) memory devices using layer-by-layer (LbL) deposition with polymethylmethacrylate (PMMA) as an organic insulator. It is demonstrated that shortened SWCNTs lead to reliable and large memory windows by virtue of better encapsulation which reduces charge leakage compared with longer SWCNT devices. The capacitance-voltage (C-V) characteristics exhibit a clockwise hysteresis, indicative of electron injection into the SWCNT charge storage elements through the PMMA layer. It is also shown that devices made using sodium dodecyl sulphate (SDS)-based SWCNTs and polyethyleneimine (PEI) produce memory windows larger than 6 V, have a high charge retention of 76% and a storage density better than 2×10 12/ cm 2.",

author = "M. Alba-Martin and T. Firmager and Atherton, {J. J.} and Rosamond, {M. C.} and Gallant, {A. J.} and Petty, {M. C.} and {Al Ghaferi}, A. and A. Ayesh and D. Ashall and Mabrook, {M. F.} and Zeze, {D. A.}",

year = "2011",

doi = "10.1109/NANO.2011.6144530",

language = "British English",

isbn = "9781457715143",

series = "Proceedings of the IEEE Conference on Nanotechnology",

pages = "991--995",

booktitle = "2011 11th IEEE International Conference on Nanotechnology, NANO 2011",

note = "2011 11th IEEE International Conference on Nanotechnology, NANO 2011 ; Conference date: 15-08-2011 Through 19-08-2011",

}

Alba-Martin, M, Firmager, T, Atherton, JJ, Rosamond, MC, Gallant, AJ, Petty, MC, Al Ghaferi, A, Ayesh, A, Ashall, D, Mabrook, MF & Zeze, DA 2011, Single-walled nanotube MIS memory devices. in 2011 11th IEEE International Conference on Nanotechnology, NANO 2011., 6144530, Proceedings of the IEEE Conference on Nanotechnology, pp. 991-995, 2011 11th IEEE International Conference on Nanotechnology, NANO 2011, Portland, OR, United States, 15/08/11. https://doi.org/10.1109/NANO.2011.6144530

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AU - Firmager, T.

AU - Atherton, J. J.

AU - Rosamond, M. C.

AU - Gallant, A. J.

AU - Petty, M. C.

AU - Al Ghaferi, A.

AU - Ayesh, A.

AU - Ashall, D.

AU - Mabrook, M. F.

AU - Zeze, D. A.

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N2 - Single-Walled carbon nanotubes (SWCNTs) were embedded in hybrid Metal-Insulator-Semiconductor (MIS) memory devices using layer-by-layer (LbL) deposition with polymethylmethacrylate (PMMA) as an organic insulator. It is demonstrated that shortened SWCNTs lead to reliable and large memory windows by virtue of better encapsulation which reduces charge leakage compared with longer SWCNT devices. The capacitance-voltage (C-V) characteristics exhibit a clockwise hysteresis, indicative of electron injection into the SWCNT charge storage elements through the PMMA layer. It is also shown that devices made using sodium dodecyl sulphate (SDS)-based SWCNTs and polyethyleneimine (PEI) produce memory windows larger than 6 V, have a high charge retention of 76% and a storage density better than 2×10 12/ cm 2.

AB - Single-Walled carbon nanotubes (SWCNTs) were embedded in hybrid Metal-Insulator-Semiconductor (MIS) memory devices using layer-by-layer (LbL) deposition with polymethylmethacrylate (PMMA) as an organic insulator. It is demonstrated that shortened SWCNTs lead to reliable and large memory windows by virtue of better encapsulation which reduces charge leakage compared with longer SWCNT devices. The capacitance-voltage (C-V) characteristics exhibit a clockwise hysteresis, indicative of electron injection into the SWCNT charge storage elements through the PMMA layer. It is also shown that devices made using sodium dodecyl sulphate (SDS)-based SWCNTs and polyethyleneimine (PEI) produce memory windows larger than 6 V, have a high charge retention of 76% and a storage density better than 2×10 12/ cm 2.

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ER -

Single-walled nanotube MIS memory devices

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