Single junction GaAs - Ge stacked tandem cell

Noura Al Wahshi; Ammar Nayfeh

doi:10.1109/PVSC.2014.6924917

Single junction GaAs - Ge stacked tandem cell

Noura Al Wahshi
, Ammar Nayfeh

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

In this work, a GaAs/Ge single junction stacked thin-film solar cell is demonstrated using physics based TCAD simulation The results are compared to a single junction thin film GaAs solar cell. The results show an increase in the V_oc and J_sc up to 7% and 12% respectively, which enhanced the absolute efficiency by 4% with the Ge layer. This increase in the current is due to the increase in the utilized spectrum in the long wavelength range. In addition, we studied the effect of Ge and GaAs thickness in the performance of the GaAs/Ge stacked cell.

Original language	British English
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	295-298
Number of pages	4
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6924917
State	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

Keywords

Gallium Arsenide (GaAs)
Germanium (Ge)
tandem cell
TCAD Sentaurus device
thin films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2014.6924917

Cite this

@inproceedings{fd11b6eee5ea48618d23213db7ddba75,

title = "Single junction GaAs - Ge stacked tandem cell",

abstract = "In this work, a GaAs/Ge single junction stacked thin-film solar cell is demonstrated using physics based TCAD simulation The results are compared to a single junction thin film GaAs solar cell. The results show an increase in the Voc and Jsc up to 7\% and 12\% respectively, which enhanced the absolute efficiency by 4\% with the Ge layer. This increase in the current is due to the increase in the utilized spectrum in the long wavelength range. In addition, we studied the effect of Ge and GaAs thickness in the performance of the GaAs/Ge stacked cell.",

keywords = "Gallium Arsenide (GaAs), Germanium (Ge), tandem cell, TCAD Sentaurus device, thin films",

author = "\{Al Wahshi\}, Noura and Ammar Nayfeh",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

month = oct,

day = "15",

doi = "10.1109/PVSC.2014.6924917",

language = "British English",

series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "295--298",

booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

address = "United States",

}

Al Wahshi, N & Nayfeh, A 2014, Single junction GaAs - Ge stacked tandem cell. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6924917, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 295-298, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14. https://doi.org/10.1109/PVSC.2014.6924917

Single junction GaAs - Ge stacked tandem cell. / Al Wahshi, Noura; Nayfeh, Ammar.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 295-298 6924917 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Single junction GaAs - Ge stacked tandem cell

AU - Al Wahshi, Noura

AU - Nayfeh, Ammar

PY - 2014/10/15

Y1 - 2014/10/15

N2 - In this work, a GaAs/Ge single junction stacked thin-film solar cell is demonstrated using physics based TCAD simulation The results are compared to a single junction thin film GaAs solar cell. The results show an increase in the Voc and Jsc up to 7% and 12% respectively, which enhanced the absolute efficiency by 4% with the Ge layer. This increase in the current is due to the increase in the utilized spectrum in the long wavelength range. In addition, we studied the effect of Ge and GaAs thickness in the performance of the GaAs/Ge stacked cell.

AB - In this work, a GaAs/Ge single junction stacked thin-film solar cell is demonstrated using physics based TCAD simulation The results are compared to a single junction thin film GaAs solar cell. The results show an increase in the Voc and Jsc up to 7% and 12% respectively, which enhanced the absolute efficiency by 4% with the Ge layer. This increase in the current is due to the increase in the utilized spectrum in the long wavelength range. In addition, we studied the effect of Ge and GaAs thickness in the performance of the GaAs/Ge stacked cell.

KW - Gallium Arsenide (GaAs)

KW - Germanium (Ge)

KW - tandem cell

KW - TCAD Sentaurus device

KW - thin films

UR - https://www.scopus.com/pages/publications/84912103175

U2 - 10.1109/PVSC.2014.6924917

DO - 10.1109/PVSC.2014.6924917

M3 - Conference contribution

AN - SCOPUS:84912103175

T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

SP - 295

EP - 298

BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Single junction GaAs - Ge stacked tandem cell

Abstract

Publication series

Conference

Keywords

UN SDGs

Access to Document

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