Single junction GaAs - Ge stacked tandem cell

Noura Al Wahshi, Ammar Nayfeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this work, a GaAs/Ge single junction stacked thin-film solar cell is demonstrated using physics based TCAD simulation The results are compared to a single junction thin film GaAs solar cell. The results show an increase in the Voc and Jsc up to 7% and 12% respectively, which enhanced the absolute efficiency by 4% with the Ge layer. This increase in the current is due to the increase in the utilized spectrum in the long wavelength range. In addition, we studied the effect of Ge and GaAs thickness in the performance of the GaAs/Ge stacked cell.

Original languageBritish English
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages295-298
Number of pages4
ISBN (Electronic)9781479943982
DOIs
StatePublished - 15 Oct 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Conference

Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States
CityDenver
Period8/06/1413/06/14

Keywords

  • Gallium Arsenide (GaAs)
  • Germanium (Ge)
  • tandem cell
  • TCAD Sentaurus device
  • thin films

Fingerprint

Dive into the research topics of 'Single junction GaAs - Ge stacked tandem cell'. Together they form a unique fingerprint.

Cite this