Simulations of mid infrared emission of InAsN semiconductors

C. I. Oriaku, M. F. Pereira

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


This paper delivers an approximation to the complex many body problem of luminescence in semiconductors to the case of mid infrared luminescence of dilute nitrides. The results are compared with recent experimental data for InAsN semiconductors.

Original languageBritish English
Pages (from-to)829-834
Number of pages6
JournalOptical and Quantum Electronics
Issue number4
StatePublished - 1 Apr 2015


  • Dilute nitrides
  • Luminescence
  • Many body effects
  • Mid infrafred


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