TY - GEN
T1 - Simulation and experimental studies of electrical characteristics of nano metal-semiconductor interfaces
AU - Alkindi, Fatmah
AU - Patole, Shashikant P.
AU - Barada, Hassan
AU - Rezeq, Moh'D
N1 - Funding Information:
This research work was supported by the lab facility at Khalifa University of Science & Technology and students’ sponsorship program from ETIC.
Publisher Copyright:
© 2019 IEEE.
PY - 2019/8
Y1 - 2019/8
N2 - Understanding the characteristics of nano metal-semiconductor (M-S) Schottky contact is crucial for developing nano electronic devices at sub 50-nm scale. Nano M-S contacts show a non-conventional current-voltage (I-V) behavior compared to the planar-Schottky contacts. This effect is attributed to the enhanced tunneling current due to the narrowing of the barrier width that results from the enhanced electric field at the nano M-S interface. In this work, we show that such nano Schottky junctions are sensitive to different doping concentrations of n-type semiconductor substrates, as well as to the metal nano contact size. The low doped concentration substrate increases the possibility of free electrons in the metal to tunnel through the thin junction barrier to the conduction band of the semiconductor. We have incorporated this effect in a simulation model of nano metal-semiconductor junctions to see the change in the I-V behavior. The model was examined using a conductive Atomic Force Microscope (C-AFM) with a gold coated nano tip, where the IV data was generated for two types of n-Si substrates, and then compared with the simulation model.
AB - Understanding the characteristics of nano metal-semiconductor (M-S) Schottky contact is crucial for developing nano electronic devices at sub 50-nm scale. Nano M-S contacts show a non-conventional current-voltage (I-V) behavior compared to the planar-Schottky contacts. This effect is attributed to the enhanced tunneling current due to the narrowing of the barrier width that results from the enhanced electric field at the nano M-S interface. In this work, we show that such nano Schottky junctions are sensitive to different doping concentrations of n-type semiconductor substrates, as well as to the metal nano contact size. The low doped concentration substrate increases the possibility of free electrons in the metal to tunnel through the thin junction barrier to the conduction band of the semiconductor. We have incorporated this effect in a simulation model of nano metal-semiconductor junctions to see the change in the I-V behavior. The model was examined using a conductive Atomic Force Microscope (C-AFM) with a gold coated nano tip, where the IV data was generated for two types of n-Si substrates, and then compared with the simulation model.
UR - https://www.scopus.com/pages/publications/85074973239
U2 - 10.1109/MWSCAS.2019.8884903
DO - 10.1109/MWSCAS.2019.8884903
M3 - Conference contribution
AN - SCOPUS:85074973239
T3 - Midwest Symposium on Circuits and Systems
SP - 1127
EP - 1130
BT - 2019 IEEE 62nd International Midwest Symposium on Circuits and Systems, MWSCAS 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 62nd IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2019
Y2 - 4 August 2019 through 7 August 2019
ER -