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Silicon-germanium multi-quantum wells for extended functionality and lower cost integration

  • M. Cengiz Onbasli
  • , Alper Yesilyurt
  • , Hyun Yong Yu
  • , Ammar M. Nayfeh
  • , Ali K. Okyay
  • Massachusetts Institute of Technology
  • Bilkent University
  • Stanford University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current.

Original languageBritish English
Title of host publication2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages530-531
Number of pages2
DOIs
StatePublished - 2010
Event23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States
Duration: 7 Nov 201011 Nov 2010

Publication series

Name2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Conference

Conference23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Country/TerritoryUnited States
CityDenver, CO
Period7/11/1011/11/10

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

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