Abstract
Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current.
| Original language | British English |
|---|---|
| Title of host publication | 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 |
| Pages | 530-531 |
| Number of pages | 2 |
| DOIs | |
| State | Published - 2010 |
| Event | 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States Duration: 7 Nov 2010 → 11 Nov 2010 |
Publication series
| Name | 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 |
|---|
Conference
| Conference | 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 |
|---|---|
| Country/Territory | United States |
| City | Denver, CO |
| Period | 7/11/10 → 11/11/10 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
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