Silicon-germanium multi-quantum wells for extended functionality and lower cost integration

M. Cengiz Onbasli; Alper Yesilyurt; Hyun Yong Yu; Ammar M. Nayfeh; Ali K. Okyay

doi:10.1109/PHOTONICS.2010.5698995

Silicon-germanium multi-quantum wells for extended functionality and lower cost integration

M. Cengiz Onbasli
, Alper Yesilyurt
, Hyun Yong Yu
, Ammar M. Nayfeh
, Ali K. Okyay

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current.

Original language	British English
Title of host publication	2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages	530-531
Number of pages	2
DOIs	https://doi.org/10.1109/PHOTONICS.2010.5698995
State	Published - 2010
Event	23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States Duration: 7 Nov 2010 → 11 Nov 2010

Publication series

Name	2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Conference

Conference	23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Country/Territory	United States
City	Denver, CO
Period	7/11/10 → 11/11/10

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/PHOTONICS.2010.5698995

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Onbasli, M. C., Yesilyurt, A., Yu, H. Y., Nayfeh, A. M., & Okyay, A. K. (2010). Silicon-germanium multi-quantum wells for extended functionality and lower cost integration. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 530-531). Article 5698995 (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010). https://doi.org/10.1109/PHOTONICS.2010.5698995

@inproceedings{9eadfb67bbc94104b60e20726cd6012f,

title = "Silicon-germanium multi-quantum wells for extended functionality and lower cost integration",

abstract = "Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current.",

author = "Onbasli, \{M. Cengiz\} and Alper Yesilyurt and Yu, \{Hyun Yong\} and Nayfeh, \{Ammar M.\} and Okyay, \{Ali K.\}",

year = "2010",

doi = "10.1109/PHOTONICS.2010.5698995",

language = "British English",

isbn = "9781424453689",

series = "2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010",

pages = "530--531",

booktitle = "2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010",

note = "23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 ; Conference date: 07-11-2010 Through 11-11-2010",

}

Onbasli, MC, Yesilyurt, A, Yu, HY, Nayfeh, AM & Okyay, AK 2010, Silicon-germanium multi-quantum wells for extended functionality and lower cost integration. in 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010., 5698995, 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, pp. 530-531, 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, Denver, CO, United States, 7/11/10. https://doi.org/10.1109/PHOTONICS.2010.5698995

Silicon-germanium multi-quantum wells for extended functionality and lower cost integration. / Onbasli, M. Cengiz; Yesilyurt, Alper; Yu, Hyun Yong et al.
2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. 2010. p. 530-531 5698995 (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Silicon-germanium multi-quantum wells for extended functionality and lower cost integration

AU - Onbasli, M. Cengiz

AU - Yesilyurt, Alper

AU - Yu, Hyun Yong

AU - Nayfeh, Ammar M.

AU - Okyay, Ali K.

PY - 2010

Y1 - 2010

N2 - Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current.

AB - Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current.

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U2 - 10.1109/PHOTONICS.2010.5698995

DO - 10.1109/PHOTONICS.2010.5698995

M3 - Conference contribution

AN - SCOPUS:79951886851

SN - 9781424453689

T3 - 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

SP - 530

EP - 531

BT - 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

T2 - 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Y2 - 7 November 2010 through 11 November 2010

ER -

Silicon-germanium multi-quantum wells for extended functionality and lower cost integration

Abstract

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Conference

UN SDGs

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