Silicon-Germanium multi-quantum well photodetectors in the near infrared

Efe Onaran, M. Cengiz Onbasli, Alper Yesilyurt, Hyun Yong Yu, Ammar M. Nayfeh, Ali K. Okyay

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ∼10 mA/cm2 and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage.

Original languageBritish English
Pages (from-to)7608-7615
Number of pages8
JournalOptics Express
Issue number7
StatePublished - 26 Mar 2012


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