SiC bipolar integrated circuits on semi-insulating substrates

S. Singh, J. A. Cooper

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Because of its wide bandgap, silicon carbide is attractive for applications in harsh environments, especially high temperature applications. The intrinsic carrier concentration in 4H-SiC is about 10-8 cm-3 at room temperature, and only 2×1011 cm-3 at 600 °C. Thermal generation currents are negligible in SiC, even at high temperatures, and the intrinsic temperature of SiC is above 900 °C. As a result, the upper temperature of SiC devices is limited by the stability of the associated metallurgy or dielectrics, rather than by the semiconductor. One of the most severe limitations is imposed by the SiO2 gate insulator in MOS devices, which limits their maximum operating temperature to about 200 °C. For applications above 200 °C, bipolar devices are required. In this work we report the performance of second-generation bipolar integrated circuits in 4H-SiC. These circuits are suitable for smallscale integration applications in smart power, aerospace, automotive, and well logging applications.

Original languageBritish English
Title of host publication67th Device Research Conference, DRC 2009
Pages273-274
Number of pages2
DOIs
StatePublished - 11 Dec 2009
Event67th Device Research Conference, DRC 2009 - University Park, PA, United States
Duration: 22 Jun 200924 Jun 2009

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Conference

Conference67th Device Research Conference, DRC 2009
Country/TerritoryUnited States
CityUniversity Park, PA
Period22/06/0924/06/09

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