@inproceedings{084bc771a2f04ec8b6f0225d3a02670a,
title = "Si nanowire memory",
abstract = "A novel Si nanowire memory cell is demonstrated by Physics Based TCAD simulation. The device utilizes the metal gate work function and the applied gate voltage to create potential barriers that trigger a positive feedback effect. Remarkably low voltage memory operation 1V is achieved with extremely long retention times (19.5s). The device is based on current high-κ metal gate technology and can be fabricated using standard CMOS process integration.",
keywords = "Memory, Nanowire, Retention",
author = "Ayman Rizk and Ammar Nayfeh",
year = "2012",
doi = "10.1109/NANO.2012.6322066",
language = "British English",
isbn = "9781467321983",
series = "Proceedings of the IEEE Conference on Nanotechnology",
booktitle = "2012 12th IEEE International Conference on Nanotechnology, NANO 2012",
note = "2012 12th IEEE International Conference on Nanotechnology, NANO 2012 ; Conference date: 20-08-2012 Through 23-08-2012",
}