Abstract
Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, 〈0001〉 oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources. These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis.
| Original language | British English |
|---|---|
| Pages (from-to) | 1897-1899 |
| Number of pages | 3 |
| Journal | Science |
| Volume | 292 |
| Issue number | 5523 |
| DOIs | |
| State | Published - 8 Jun 2001 |
Fingerprint
Dive into the research topics of 'Room-temperature ultraviolet nanowire nanolasers'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver