Room-temperature ultraviolet nanowire nanolasers

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang

Research output: Contribution to journalArticlepeer-review

9244 Scopus citations

Abstract

Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, 〈0001〉 oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources. These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis.

Original languageBritish English
Pages (from-to)1897-1899
Number of pages3
JournalScience
Volume292
Issue number5523
DOIs
StatePublished - 8 Jun 2001

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