Room-temperature silicon band-edge photoluminescence enhanced by spin-coated sol-gel films

S. Abedrabbo; B. Lahlouh; S. Shet; A. T. Fiory

doi:10.1016/j.scriptamat.2011.07.025

Room-temperature silicon band-edge photoluminescence enhanced by spin-coated sol-gel films

S. Abedrabbo
, B. Lahlouh
, S. Shet
, A. T. Fiory

Physics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at.%) silica-gel films (0.13 μm) and vacuum annealed; the strongest emission was obtained at ∼700 °C. Comparative study of annealing behavior indicates an efficiency enhancement of two orders of magnitude. Emission from Er³⁺ ions in the silica film is used to gauge relative emission strengths. Mechanisms for inducing emission from silicon utilizing stresses in sol-gel films are discussed.

Original language	British English
Pages (from-to)	767-770
Number of pages	4
Journal	Scripta Materialia
Volume	65
Issue number	9
DOIs	https://doi.org/10.1016/j.scriptamat.2011.07.025
State	Published - Nov 2011

Keywords

Photoluminescence
Semiconductor silicon
Sol-gel materials
Thin films

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10.1016/j.scriptamat.2011.07.025

Cite this

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title = "Room-temperature silicon band-edge photoluminescence enhanced by spin-coated sol-gel films",

abstract = "Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at.\%) silica-gel films (0.13 μm) and vacuum annealed; the strongest emission was obtained at ∼700 °C. Comparative study of annealing behavior indicates an efficiency enhancement of two orders of magnitude. Emission from Er3+ ions in the silica film is used to gauge relative emission strengths. Mechanisms for inducing emission from silicon utilizing stresses in sol-gel films are discussed.",

keywords = "Photoluminescence, Semiconductor silicon, Sol-gel materials, Thin films",

author = "S. Abedrabbo and B. Lahlouh and S. Shet and Fiory, \{A. T.\}",

note = "Funding Information: Partial support by Deanship of Academic Research at the University of Jordan, Project contract no. 1030 and Hamdi Mango Center for Scientific Research (HMCSR), the New Jersey Institute of Technology, and the US National Renewable Energy Laboratory, and encouragement and support of N.M. Ravindra is gratefully acknowledged. ",

year = "2011",

month = nov,

doi = "10.1016/j.scriptamat.2011.07.025",

language = "British English",

volume = "65",

pages = "767--770",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Acta Materialia Inc",

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TY - JOUR

T1 - Room-temperature silicon band-edge photoluminescence enhanced by spin-coated sol-gel films

AU - Abedrabbo, S.

AU - Lahlouh, B.

AU - Shet, S.

AU - Fiory, A. T.

N1 - Funding Information: Partial support by Deanship of Academic Research at the University of Jordan, Project contract no. 1030 and Hamdi Mango Center for Scientific Research (HMCSR), the New Jersey Institute of Technology, and the US National Renewable Energy Laboratory, and encouragement and support of N.M. Ravindra is gratefully acknowledged.

PY - 2011/11

Y1 - 2011/11

N2 - Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at.%) silica-gel films (0.13 μm) and vacuum annealed; the strongest emission was obtained at ∼700 °C. Comparative study of annealing behavior indicates an efficiency enhancement of two orders of magnitude. Emission from Er3+ ions in the silica film is used to gauge relative emission strengths. Mechanisms for inducing emission from silicon utilizing stresses in sol-gel films are discussed.

AB - Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at.%) silica-gel films (0.13 μm) and vacuum annealed; the strongest emission was obtained at ∼700 °C. Comparative study of annealing behavior indicates an efficiency enhancement of two orders of magnitude. Emission from Er3+ ions in the silica film is used to gauge relative emission strengths. Mechanisms for inducing emission from silicon utilizing stresses in sol-gel films are discussed.

KW - Photoluminescence

KW - Semiconductor silicon

KW - Sol-gel materials

KW - Thin films

UR - https://www.scopus.com/pages/publications/80052788036

U2 - 10.1016/j.scriptamat.2011.07.025

DO - 10.1016/j.scriptamat.2011.07.025

M3 - Article

AN - SCOPUS:80052788036

SN - 1359-6462

VL - 65

SP - 767

EP - 770

JO - Scripta Materialia

JF - Scripta Materialia

IS - 9

ER -

Room-temperature silicon band-edge photoluminescence enhanced by spin-coated sol-gel films

Abstract

Keywords

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