Abstract
Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at.%) silica-gel films (0.13 μm) and vacuum annealed; the strongest emission was obtained at ∼700 °C. Comparative study of annealing behavior indicates an efficiency enhancement of two orders of magnitude. Emission from Er3+ ions in the silica film is used to gauge relative emission strengths. Mechanisms for inducing emission from silicon utilizing stresses in sol-gel films are discussed.
Original language | British English |
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Pages (from-to) | 767-770 |
Number of pages | 4 |
Journal | Scripta Materialia |
Volume | 65 |
Issue number | 9 |
DOIs | |
State | Published - Nov 2011 |
Keywords
- Photoluminescence
- Semiconductor silicon
- Sol-gel materials
- Thin films