Room-temperature silicon band-edge photoluminescence enhanced by spin-coated sol-gel films

S. Abedrabbo, B. Lahlouh, S. Shet, A. T. Fiory

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at.%) silica-gel films (0.13 μm) and vacuum annealed; the strongest emission was obtained at ∼700 °C. Comparative study of annealing behavior indicates an efficiency enhancement of two orders of magnitude. Emission from Er3+ ions in the silica film is used to gauge relative emission strengths. Mechanisms for inducing emission from silicon utilizing stresses in sol-gel films are discussed.

Original languageBritish English
Pages (from-to)767-770
Number of pages4
JournalScripta Materialia
Issue number9
StatePublished - Nov 2011


  • Photoluminescence
  • Semiconductor silicon
  • Sol-gel materials
  • Thin films


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