Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices

Mohd Sharizal Alias, Malleswararao Tangi, Jorge A. Holguin-Lerma, Edgars Stegenburgs, Abdullah A. Alatawi, Islam Ashry, Ram Chandra Subedi, Davide Priante, Mohammad Khaled Shakfa, Tien Khee Ng, Boon S. Ooi

Research output: Contribution to journalReview articlepeer-review

43 Scopus citations

Abstract

Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics approaches using nanostructures (e.g., nanowires, nanorods, and quantum dots/disks) and nanofabrication (e.g., substrate patterning, photonic crystals, nanogratings, and surface-plasmons) have been demonstrated to address the material growth challenges and to enhance the device efficiencies of photonic devices operating at UV wavelengths. Here, we review the progress of nanophotonics implementations using nanostructured interfaces and nanofabrication approaches for the group III-nitride semiconductors to realize efficient UV-based photonic devices. The existing challenges of nanophotonics applications are presented. This review aims to provide analysis of state-of-the-art nanophotonic approaches in advancing the UV-photonic devices based on group III-nitride semiconductors.

Original languageBritish English
Article number043508
JournalJournal of Nanophotonics
Volume12
Issue number4
DOIs
StatePublished - 1 Oct 2018

Keywords

  • III-nitrides
  • nanophotonics
  • nanostructures
  • photonic devices
  • UV semiconductors

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