Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

Haiding Sun; Feng Wu; Young Jae Park; T. M. Al tahtamouni; Che Hao Liao; Wenzhe Guo; Nasir Alfaraj; Kuang Hui Li; Dalaver H. Anjum; Theeradetch Detchprohm; Russell D. Dupuis; Xiaohang Li

doi:10.7567/APEX.11.011001

Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

Haiding Sun
, Feng Wu
, Young Jae Park
, T. M. Al tahtamouni
, Che Hao Liao
, Wenzhe Guo
, Nasir Alfaraj
, Kuang Hui Li
, Dalaver H. Anjum
, Theeradetch Detchprohm
, Russell D. Dupuis
, Xiaohang Li

Physics

King Abdullah University of Science and Technology
School of Electrical and Computer Engineering
Qatar University

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We reveal the microstructure and dislocation behavior in 20-pair B_0.14Al_0.86N/Al_0.70Ga_0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B_0.14Al_0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5% tensile strain and 1% compressive strain in the B_0.14Al_0.86N and Al_0.70Ga_0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.

Original language	British English
Article number	011001
Journal	Applied Physics Express
Volume	11
Issue number	1
DOIs	https://doi.org/10.7567/APEX.11.011001
State	Published - Jan 2018

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@article{6e253dd9b089455ca979ec301f8b875c,

title = "Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures",

abstract = "We reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B0.14Al0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5\% tensile strain and 1\% compressive strain in the B0.14Al0.86N and Al0.70Ga0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.",

author = "Haiding Sun and Feng Wu and Park, \{Young Jae\} and \{Al tahtamouni\}, \{T. M.\} and Liao, \{Che Hao\} and Wenzhe Guo and Nasir Alfaraj and Li, \{Kuang Hui\} and Anjum, \{Dalaver H.\} and Theeradetch Detchprohm and Dupuis, \{Russell D.\} and Xiaohang Li",

note = "Funding Information: Acknowledgments The KAUST authors acknowledge the support of the GCC Research Program REP=1=3189-01-01, Baseline BAS=1=1664-01-01, and Equipment BAS=1=1664-01-07. The work at QU was supported by the GCC Research Program GCC-2017-007. The work at the Georgia Institute of Technology was supported in part by DARPA under Grant No. W911NF-15-1-0026 and NSF under Grant No. DMR-1410874. R.D.D. acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance. Publisher Copyright: {\textcopyright} 2018 The Japan Society of Applied Physics.",

year = "2018",

month = jan,

doi = "10.7567/APEX.11.011001",

language = "British English",

volume = "11",

journal = "Applied Physics Express",

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T1 - Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

AU - Sun, Haiding

AU - Wu, Feng

AU - Park, Young Jae

AU - Al tahtamouni, T. M.

AU - Liao, Che Hao

AU - Guo, Wenzhe

AU - Alfaraj, Nasir

AU - Li, Kuang Hui

AU - Anjum, Dalaver H.

AU - Detchprohm, Theeradetch

AU - Dupuis, Russell D.

AU - Li, Xiaohang

N1 - Funding Information: Acknowledgments The KAUST authors acknowledge the support of the GCC Research Program REP=1=3189-01-01, Baseline BAS=1=1664-01-01, and Equipment BAS=1=1664-01-07. The work at QU was supported by the GCC Research Program GCC-2017-007. The work at the Georgia Institute of Technology was supported in part by DARPA under Grant No. W911NF-15-1-0026 and NSF under Grant No. DMR-1410874. R.D.D. acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance. Publisher Copyright: © 2018 The Japan Society of Applied Physics.

PY - 2018/1

Y1 - 2018/1

N2 - We reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B0.14Al0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5% tensile strain and 1% compressive strain in the B0.14Al0.86N and Al0.70Ga0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.

AB - We reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B0.14Al0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5% tensile strain and 1% compressive strain in the B0.14Al0.86N and Al0.70Ga0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.

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VL - 11

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ER -

Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

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