@article{6e253dd9b089455ca979ec301f8b875c,
title = "Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures",
abstract = "We reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B0.14Al0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5% tensile strain and 1% compressive strain in the B0.14Al0.86N and Al0.70Ga0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.",
author = "Haiding Sun and Feng Wu and Park, {Young Jae} and {Al tahtamouni}, {T. M.} and Liao, {Che Hao} and Wenzhe Guo and Nasir Alfaraj and Li, {Kuang Hui} and Anjum, {Dalaver H.} and Theeradetch Detchprohm and Dupuis, {Russell D.} and Xiaohang Li",
note = "Funding Information: Acknowledgments The KAUST authors acknowledge the support of the GCC Research Program REP=1=3189-01-01, Baseline BAS=1=1664-01-01, and Equipment BAS=1=1664-01-07. The work at QU was supported by the GCC Research Program GCC-2017-007. The work at the Georgia Institute of Technology was supported in part by DARPA under Grant No. W911NF-15-1-0026 and NSF under Grant No. DMR-1410874. R.D.D. acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance. Publisher Copyright: {\textcopyright} 2018 The Japan Society of Applied Physics.",
year = "2018",
month = jan,
doi = "10.7567/APEX.11.011001",
language = "British English",
volume = "11",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "1",
}