Resistive switching properties of manganese oxide nanoparticles with hexagonal shape

Quanli Hu; Mira Park; Yawar Abbas; Jai Soon Kim; Tae Sik Yoon; Young Jin Choi; Chi Jung Kang

doi:10.1088/0268-1242/30/1/015017

Resistive switching properties of manganese oxide nanoparticles with hexagonal shape

Quanli Hu, Mira Park, Yawar Abbas, Jai Soon Kim, Tae Sik Yoon, Young Jin Choi, Chi Jung Kang

Myongji University

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Uniformly sized hexagonal shaped manganese oxide (MnO) nanoparticles were chemically synthesized. The bipolar resistive switching characteristics were investigated in the Ti/MnO/Pt structure. The nanoparticles were assembled as close-packed monolayer with a thickness of 30 nm by dip-coating and annealing procedures. The bipolar resistive switching behaviors in Ti/MnO/Pt device could be caused by the formation and rupture of conductive filaments in the nanoparticles. The temperature dependence of resistance was discussed. The resistance of HRS presented a negative temperature dependence at high temperature, indicating a typical semiconducting behavior. The resistance of LRS increased with the elevated temperature exhibiting a metallic state. Ohmic conduction, space charge limited conduction (SCLC), and Schottky conduction have been investigated for the conduction and switching mechanism.

Original language	British English
Article number	015017
Journal	Semiconductor Science and Technology
Volume	30
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/30/1/015017
State	Published - 1 Jan 2015

Keywords

manganese oxide
nanoparticle
resistive switching

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10.1088/0268-1242/30/1/015017

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@article{b8220f71fc25464f83937fe45aa8311e,

title = "Resistive switching properties of manganese oxide nanoparticles with hexagonal shape",

abstract = "Uniformly sized hexagonal shaped manganese oxide (MnO) nanoparticles were chemically synthesized. The bipolar resistive switching characteristics were investigated in the Ti/MnO/Pt structure. The nanoparticles were assembled as close-packed monolayer with a thickness of 30 nm by dip-coating and annealing procedures. The bipolar resistive switching behaviors in Ti/MnO/Pt device could be caused by the formation and rupture of conductive filaments in the nanoparticles. The temperature dependence of resistance was discussed. The resistance of HRS presented a negative temperature dependence at high temperature, indicating a typical semiconducting behavior. The resistance of LRS increased with the elevated temperature exhibiting a metallic state. Ohmic conduction, space charge limited conduction (SCLC), and Schottky conduction have been investigated for the conduction and switching mechanism.",

keywords = "manganese oxide, nanoparticle, resistive switching",

author = "Quanli Hu and Mira Park and Yawar Abbas and {Soon Kim}, Jai and Yoon, {Tae Sik} and Choi, {Young Jin} and Kang, {Chi Jung}",

note = "Publisher Copyright: {\textcopyright} 2015 IOP Publishing Ltd.",

year = "2015",

month = jan,

day = "1",

doi = "10.1088/0268-1242/30/1/015017",

language = "British English",

volume = "30",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - Resistive switching properties of manganese oxide nanoparticles with hexagonal shape

AU - Hu, Quanli

AU - Park, Mira

AU - Abbas, Yawar

AU - Soon Kim, Jai

AU - Yoon, Tae Sik

AU - Choi, Young Jin

AU - Kang, Chi Jung

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Uniformly sized hexagonal shaped manganese oxide (MnO) nanoparticles were chemically synthesized. The bipolar resistive switching characteristics were investigated in the Ti/MnO/Pt structure. The nanoparticles were assembled as close-packed monolayer with a thickness of 30 nm by dip-coating and annealing procedures. The bipolar resistive switching behaviors in Ti/MnO/Pt device could be caused by the formation and rupture of conductive filaments in the nanoparticles. The temperature dependence of resistance was discussed. The resistance of HRS presented a negative temperature dependence at high temperature, indicating a typical semiconducting behavior. The resistance of LRS increased with the elevated temperature exhibiting a metallic state. Ohmic conduction, space charge limited conduction (SCLC), and Schottky conduction have been investigated for the conduction and switching mechanism.

AB - Uniformly sized hexagonal shaped manganese oxide (MnO) nanoparticles were chemically synthesized. The bipolar resistive switching characteristics were investigated in the Ti/MnO/Pt structure. The nanoparticles were assembled as close-packed monolayer with a thickness of 30 nm by dip-coating and annealing procedures. The bipolar resistive switching behaviors in Ti/MnO/Pt device could be caused by the formation and rupture of conductive filaments in the nanoparticles. The temperature dependence of resistance was discussed. The resistance of HRS presented a negative temperature dependence at high temperature, indicating a typical semiconducting behavior. The resistance of LRS increased with the elevated temperature exhibiting a metallic state. Ohmic conduction, space charge limited conduction (SCLC), and Schottky conduction have been investigated for the conduction and switching mechanism.

KW - manganese oxide

KW - nanoparticle

KW - resistive switching

UR - http://www.scopus.com/inward/record.url?scp=84920167365&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/30/1/015017

DO - 10.1088/0268-1242/30/1/015017

M3 - Article

AN - SCOPUS:84920167365

SN - 0268-1242

VL - 30

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 1

M1 - 015017

ER -

Resistive switching properties of manganese oxide nanoparticles with hexagonal shape

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