Resistive switching in sol-gel derived microscale memristors

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9 Scopus citations

Abstract

This paper describes the synthesis of micro-Thick hafnium-oxide (60 μm) memristors using a low-cost sol-gel drop-coating technique, and emphasizes on key parameters to be considered in the development of the microscale technology. The impact of electrode material on the device I-V electrical behavior is screened with the use of different metals, with different work-functions and oxygen affinities such as aluminum (Al), copper (Cu), titanium (Ti) and palladium (Pd) under a symmetric metal-insulator-metal arrangement. The type of metal contact was found to play a vital role in the switching behavior of the devices, highlighting a potential chemical interplay between the drop-coating solution and the electrode surface during the fabrication process. The effect of the sol-gel drying temperature on the I-V curve characteristics is also investigated with similar devices made at 60 °C and 80 °C. For example, the ROFF/RON ratio of Al/Al-Type memristors was found to increase by approximately nine folds when the drying temperature was increased from 60 °C to 80 °C. As depicted from the changes observed in the maximum flowing current within an I-V curve, the drying temperature was generally found to mainly affect the internal resistance of the devices, allowing external control over the ROFF/RON ratio.

Original languageBritish English
Title of host publication2016 IEEE 59th International Midwest Symposium on Circuits and Systems, MWSCAS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509009169
DOIs
StatePublished - 2 Jul 2016
Event59th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2016 - Abu Dhabi, United Arab Emirates
Duration: 16 Oct 201619 Oct 2016

Publication series

NameMidwest Symposium on Circuits and Systems
Volume0
ISSN (Print)1548-3746

Conference

Conference59th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2016
Country/TerritoryUnited Arab Emirates
CityAbu Dhabi
Period16/10/1619/10/16

Keywords

  • Electrode
  • Hfo2
  • Memristor
  • Microscale
  • Temperature

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