Resistive switching characteristics of Ta2O5 thin film and maghemite nanoparticles assembly hybrid device

Mi Ra Park; Yawar Abbas; Quanli Hu; Haider Abbas; Nam Joo Lee; Tae Sung Lee; Tae Sik Yoon; Chi Jung Kang

doi:10.1166/jnn.2016.13132

Resistive switching characteristics of Ta₂O₅ thin film and maghemite nanoparticles assembly hybrid device

Mi Ra Park, Yawar Abbas, Quanli Hu, Haider Abbas, Nam Joo Lee, Tae Sung Lee, Tae Sik Yoon, Chi Jung Kang

Myongji University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The fabrication of a hybrid structure with a γ-Fe₂O₃ nanoparticle assembly and a Ta₂O₅ thin-film layer was demonstrated. This hybrid device rejuvenated the switching characteristics of only the Ta₂O₅ thin film. The hybrid device manifested the typical bipolar switching characteristics in the structure of Ti/γ-Fe₂O₃/Ta₂O₅/Pt on the SiO₂/Si substrate. The SET voltage (V_SET) was observed at ∼+1.6 V, and the RESET voltage (V_RESET), at ∼-1 V, which are smaller compared to those of the Ti/Ta₂O₅/Pt device. The temperature-dependent switching characteristics of both devices were studied to understand the conduction mechanism in both devices.The results were space charge limited conduction (SCLC) for the higher voltages at a high resistance state (HRS) and purely ohmic conduction at a low resistance state (LRS). The devices showed a high and stable ratio of currents in LRS and HRS. Finally, it was confirmed that the insertion of the γ-Fe₂O₃ nanoparticle assembly at the interface of Ti/Ta₂O₅ rejuvenated the switching characteristics of the hybrid device.

Original language	British English
Pages (from-to)	10225-10230
Number of pages	6
Journal	Journal of Nanoscience and Nanotechnology
Volume	16
Issue number	10
DOIs	https://doi.org/10.1166/jnn.2016.13132
State	Published - Oct 2016

Keywords

Defects
Hybrid device
Nanoparticles
Resistive switching

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10.1166/jnn.2016.13132

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title = "Resistive switching characteristics of Ta2O5 thin film and maghemite nanoparticles assembly hybrid device",

abstract = "The fabrication of a hybrid structure with a γ-Fe2O3 nanoparticle assembly and a Ta2O5 thin-film layer was demonstrated. This hybrid device rejuvenated the switching characteristics of only the Ta2O5 thin film. The hybrid device manifested the typical bipolar switching characteristics in the structure of Ti/γ-Fe2O3/Ta2O5/Pt on the SiO2/Si substrate. The SET voltage (VSET) was observed at ∼+1.6 V, and the RESET voltage (VRESET), at ∼-1 V, which are smaller compared to those of the Ti/Ta2O5/Pt device. The temperature-dependent switching characteristics of both devices were studied to understand the conduction mechanism in both devices.The results were space charge limited conduction (SCLC) for the higher voltages at a high resistance state (HRS) and purely ohmic conduction at a low resistance state (LRS). The devices showed a high and stable ratio of currents in LRS and HRS. Finally, it was confirmed that the insertion of the γ-Fe2O3 nanoparticle assembly at the interface of Ti/Ta2O5 rejuvenated the switching characteristics of the hybrid device.",

keywords = "Defects, Hybrid device, Nanoparticles, Resistive switching",

author = "Park, {Mi Ra} and Yawar Abbas and Quanli Hu and Haider Abbas and Lee, {Nam Joo} and Lee, {Tae Sung} and Yoon, {Tae Sik} and Kang, {Chi Jung}",

note = "Funding Information: This research was supported by the Nano Material Technology Development Program of the National Research Foundation of Korea (NRF), with funding from the Ministry of Science, ICT and Future Planning (NRF-2011-0030228). Publisher Copyright: Copyright {\textcopyright} 2016 American Scientific Publishers All rights reserved.",

year = "2016",

month = oct,

doi = "10.1166/jnn.2016.13132",

language = "British English",

volume = "16",

pages = "10225--10230",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

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T1 - Resistive switching characteristics of Ta2O5 thin film and maghemite nanoparticles assembly hybrid device

AU - Park, Mi Ra

AU - Abbas, Yawar

AU - Hu, Quanli

AU - Abbas, Haider

AU - Lee, Nam Joo

AU - Lee, Tae Sung

AU - Yoon, Tae Sik

AU - Kang, Chi Jung

N1 - Funding Information: This research was supported by the Nano Material Technology Development Program of the National Research Foundation of Korea (NRF), with funding from the Ministry of Science, ICT and Future Planning (NRF-2011-0030228). Publisher Copyright: Copyright © 2016 American Scientific Publishers All rights reserved.

PY - 2016/10

Y1 - 2016/10

N2 - The fabrication of a hybrid structure with a γ-Fe2O3 nanoparticle assembly and a Ta2O5 thin-film layer was demonstrated. This hybrid device rejuvenated the switching characteristics of only the Ta2O5 thin film. The hybrid device manifested the typical bipolar switching characteristics in the structure of Ti/γ-Fe2O3/Ta2O5/Pt on the SiO2/Si substrate. The SET voltage (VSET) was observed at ∼+1.6 V, and the RESET voltage (VRESET), at ∼-1 V, which are smaller compared to those of the Ti/Ta2O5/Pt device. The temperature-dependent switching characteristics of both devices were studied to understand the conduction mechanism in both devices.The results were space charge limited conduction (SCLC) for the higher voltages at a high resistance state (HRS) and purely ohmic conduction at a low resistance state (LRS). The devices showed a high and stable ratio of currents in LRS and HRS. Finally, it was confirmed that the insertion of the γ-Fe2O3 nanoparticle assembly at the interface of Ti/Ta2O5 rejuvenated the switching characteristics of the hybrid device.

AB - The fabrication of a hybrid structure with a γ-Fe2O3 nanoparticle assembly and a Ta2O5 thin-film layer was demonstrated. This hybrid device rejuvenated the switching characteristics of only the Ta2O5 thin film. The hybrid device manifested the typical bipolar switching characteristics in the structure of Ti/γ-Fe2O3/Ta2O5/Pt on the SiO2/Si substrate. The SET voltage (VSET) was observed at ∼+1.6 V, and the RESET voltage (VRESET), at ∼-1 V, which are smaller compared to those of the Ti/Ta2O5/Pt device. The temperature-dependent switching characteristics of both devices were studied to understand the conduction mechanism in both devices.The results were space charge limited conduction (SCLC) for the higher voltages at a high resistance state (HRS) and purely ohmic conduction at a low resistance state (LRS). The devices showed a high and stable ratio of currents in LRS and HRS. Finally, it was confirmed that the insertion of the γ-Fe2O3 nanoparticle assembly at the interface of Ti/Ta2O5 rejuvenated the switching characteristics of the hybrid device.

KW - Defects

KW - Hybrid device

KW - Nanoparticles

KW - Resistive switching

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Resistive switching characteristics of Ta₂O₅ thin film and maghemite nanoparticles assembly hybrid device

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