Resistive switching characteristics of Ta2O5 thin film and maghemite nanoparticles assembly hybrid device

Mi Ra Park, Yawar Abbas, Quanli Hu, Haider Abbas, Nam Joo Lee, Tae Sung Lee, Tae Sik Yoon, Chi Jung Kang

    Research output: Contribution to journalArticlepeer-review

    2 Scopus citations

    Abstract

    The fabrication of a hybrid structure with a γ-Fe2O3 nanoparticle assembly and a Ta2O5 thin-film layer was demonstrated. This hybrid device rejuvenated the switching characteristics of only the Ta2O5 thin film. The hybrid device manifested the typical bipolar switching characteristics in the structure of Ti/γ-Fe2O3/Ta2O5/Pt on the SiO2/Si substrate. The SET voltage (VSET) was observed at ∼+1.6 V, and the RESET voltage (VRESET), at ∼-1 V, which are smaller compared to those of the Ti/Ta2O5/Pt device. The temperature-dependent switching characteristics of both devices were studied to understand the conduction mechanism in both devices.The results were space charge limited conduction (SCLC) for the higher voltages at a high resistance state (HRS) and purely ohmic conduction at a low resistance state (LRS). The devices showed a high and stable ratio of currents in LRS and HRS. Finally, it was confirmed that the insertion of the γ-Fe2O3 nanoparticle assembly at the interface of Ti/Ta2O5 rejuvenated the switching characteristics of the hybrid device.

    Original languageBritish English
    Pages (from-to)10225-10230
    Number of pages6
    JournalJournal of Nanoscience and Nanotechnology
    Volume16
    Issue number10
    DOIs
    StatePublished - Oct 2016

    Keywords

    • Defects
    • Hybrid device
    • Nanoparticles
    • Resistive switching

    Fingerprint

    Dive into the research topics of 'Resistive switching characteristics of Ta2O5 thin film and maghemite nanoparticles assembly hybrid device'. Together they form a unique fingerprint.

    Cite this