Resistive switching characteristics of tantalum oxide thin film and titanium oxide nanoparticles hybrid structure

Mi Ra Park; Yawar Abbas; Quanli Hu; Tae Sik Yoon; Young Jin Choi; Chi Jung Kang

doi:10.1166/jnn.2015.11480

Resistive switching characteristics of tantalum oxide thin film and titanium oxide nanoparticles hybrid structure

Mi Ra Park, Yawar Abbas, Quanli Hu, Tae Sik Yoon, Young Jin Choi, Chi Jung Kang

Myongji University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The fabrication of hybrid structure with TiO₂ nanoparticle assembly and Ta₂O₅ thin film layer was demonstrated. The close-packed nanoparticles could influence the resistive switching behaviors due to the huge numbers of interface states and vacancies in the nanoparticle assembly. The device with hybrid structure presented the typical bipolar resistive switching characteristics in the structure of Ti/TiO₂/Ta₂O₅/Au on SiO₂/Si substrate. The set voltage was observed at ∼0.7 V, and the reset voltage occurred at ∼-0.7 V, which was smaller than that of Ta₂O₅ layer only. The electrical conduction mechanisms were the ohmic conduction at low resistance state (LRS) and the space charge limited conduction at high resistance state (HRS), respectively. The devices showed stable current ratio of LRS to HRS. The temperature dependent properties of the devices were also investigated. The device with nanoparticle assembly showed better electrical characteristics with low HRS current level and stable LRS current level with respect to the temperature.

Original language	British English
Pages (from-to)	8613-8616
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	15
Issue number	11
DOIs	https://doi.org/10.1166/jnn.2015.11480
State	Published - 1 Nov 2015

Keywords

Hybrid structure
Nanoparticle
Resistive switching

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title = "Resistive switching characteristics of tantalum oxide thin film and titanium oxide nanoparticles hybrid structure",

abstract = "The fabrication of hybrid structure with TiO2 nanoparticle assembly and Ta2O5 thin film layer was demonstrated. The close-packed nanoparticles could influence the resistive switching behaviors due to the huge numbers of interface states and vacancies in the nanoparticle assembly. The device with hybrid structure presented the typical bipolar resistive switching characteristics in the structure of Ti/TiO2/Ta2O5/Au on SiO2/Si substrate. The set voltage was observed at ∼0.7 V, and the reset voltage occurred at ∼-0.7 V, which was smaller than that of Ta2O5 layer only. The electrical conduction mechanisms were the ohmic conduction at low resistance state (LRS) and the space charge limited conduction at high resistance state (HRS), respectively. The devices showed stable current ratio of LRS to HRS. The temperature dependent properties of the devices were also investigated. The device with nanoparticle assembly showed better electrical characteristics with low HRS current level and stable LRS current level with respect to the temperature.",

keywords = "Hybrid structure, Nanoparticle, Resistive switching",

author = "Park, {Mi Ra} and Yawar Abbas and Quanli Hu and Yoon, {Tae Sik} and Choi, {Young Jin} and Kang, {Chi Jung}",

note = "Publisher Copyright: Copyright {\textcopyright} 2015 American Scientific Publishers.",

year = "2015",

month = nov,

day = "1",

doi = "10.1166/jnn.2015.11480",

language = "British English",

volume = "15",

pages = "8613--8616",

journal = "Journal of Nanoscience and Nanotechnology",

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T1 - Resistive switching characteristics of tantalum oxide thin film and titanium oxide nanoparticles hybrid structure

AU - Park, Mi Ra

AU - Abbas, Yawar

AU - Hu, Quanli

AU - Yoon, Tae Sik

AU - Choi, Young Jin

AU - Kang, Chi Jung

PY - 2015/11/1

Y1 - 2015/11/1

N2 - The fabrication of hybrid structure with TiO2 nanoparticle assembly and Ta2O5 thin film layer was demonstrated. The close-packed nanoparticles could influence the resistive switching behaviors due to the huge numbers of interface states and vacancies in the nanoparticle assembly. The device with hybrid structure presented the typical bipolar resistive switching characteristics in the structure of Ti/TiO2/Ta2O5/Au on SiO2/Si substrate. The set voltage was observed at ∼0.7 V, and the reset voltage occurred at ∼-0.7 V, which was smaller than that of Ta2O5 layer only. The electrical conduction mechanisms were the ohmic conduction at low resistance state (LRS) and the space charge limited conduction at high resistance state (HRS), respectively. The devices showed stable current ratio of LRS to HRS. The temperature dependent properties of the devices were also investigated. The device with nanoparticle assembly showed better electrical characteristics with low HRS current level and stable LRS current level with respect to the temperature.

AB - The fabrication of hybrid structure with TiO2 nanoparticle assembly and Ta2O5 thin film layer was demonstrated. The close-packed nanoparticles could influence the resistive switching behaviors due to the huge numbers of interface states and vacancies in the nanoparticle assembly. The device with hybrid structure presented the typical bipolar resistive switching characteristics in the structure of Ti/TiO2/Ta2O5/Au on SiO2/Si substrate. The set voltage was observed at ∼0.7 V, and the reset voltage occurred at ∼-0.7 V, which was smaller than that of Ta2O5 layer only. The electrical conduction mechanisms were the ohmic conduction at low resistance state (LRS) and the space charge limited conduction at high resistance state (HRS), respectively. The devices showed stable current ratio of LRS to HRS. The temperature dependent properties of the devices were also investigated. The device with nanoparticle assembly showed better electrical characteristics with low HRS current level and stable LRS current level with respect to the temperature.

KW - Hybrid structure

KW - Nanoparticle

KW - Resistive switching

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DO - 10.1166/jnn.2015.11480

M3 - Article

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SP - 8613

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JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 11

ER -

Resistive switching characteristics of tantalum oxide thin film and titanium oxide nanoparticles hybrid structure

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Keywords

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