Resistive switching characteristics of tantalum oxide and titanium oxide heterojunction devices

Haider Abbas; Yawar Abbas; Mi Ra Park; Quanli Hu; Tae Sung Lee; Jongweon Cho; Tae Sik Yoon; Young Jin Choi; Chi Jung Kang

doi:10.1166/jnn.2017.14730

Resistive switching characteristics of tantalum oxide and titanium oxide heterojunction devices

Haider Abbas, Yawar Abbas, Mi Ra Park, Quanli Hu, Tae Sung Lee, Jongweon Cho, Tae Sik Yoon, Young Jin Choi, Chi Jung Kang

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

In this study, single-layer and trilayer devices with Pt/Ti/TaO₂/Pt and Pt/Ti/TiO_x/TaO₂/TiO_x/Pt structures were fabricated. For the trilayer device, a tantalum oxide thin film was sandwiched between the titanium oxide thin films. The thickness of the tantalum oxide in the single-layer device was ∼20 nm. The total trilayer oxide thickness was ~17.5 nm. The trilayer heterojunction device exhibited very stable bipolar resistive switching, which could be caused by the formation and rupture of the conducting filaments (CFs) in the oxide switching layers. The trilayer device showed better endurance and retention characteristics and low SET and RESET voltages, with very small variations. The conduction mechanisms of ohmic conduction, space-charge-limited conduction, Poole-Frenkel emission, and Schottky conduction have been investigated as the possible conduction mechanisms for the resistive switching of the devices.

Original language	British English
Pages (from-to)	7150-7154
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	17
Issue number	10
DOIs	https://doi.org/10.1166/jnn.2017.14730
State	Published - Oct 2017

Keywords

Resistive Switching
RRAM
Tantalum Oxide
Titanium Oxide

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10.1166/jnn.2017.14730

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title = "Resistive switching characteristics of tantalum oxide and titanium oxide heterojunction devices",

abstract = "In this study, single-layer and trilayer devices with Pt/Ti/TaO2/Pt and Pt/Ti/TiOx/TaO2/TiOx/Pt structures were fabricated. For the trilayer device, a tantalum oxide thin film was sandwiched between the titanium oxide thin films. The thickness of the tantalum oxide in the single-layer device was ∼20 nm. The total trilayer oxide thickness was ~17.5 nm. The trilayer heterojunction device exhibited very stable bipolar resistive switching, which could be caused by the formation and rupture of the conducting filaments (CFs) in the oxide switching layers. The trilayer device showed better endurance and retention characteristics and low SET and RESET voltages, with very small variations. The conduction mechanisms of ohmic conduction, space-charge-limited conduction, Poole-Frenkel emission, and Schottky conduction have been investigated as the possible conduction mechanisms for the resistive switching of the devices.",

keywords = "Resistive Switching, RRAM, Tantalum Oxide, Titanium Oxide",

author = "Haider Abbas and Yawar Abbas and Park, {Mi Ra} and Quanli Hu and Lee, {Tae Sung} and Jongweon Cho and Yoon, {Tae Sik} and Choi, {Young Jin} and Kang, {Chi Jung}",

note = "Funding Information: This research was supported by the Nano Material Technology Development Program of the National Research Foundation of Korea (NRF), with funding from the Ministry of Science, ICT and Future Planning (NRF-2011-0030228). Publisher Copyright: Copyright {\textcopyright} 2017 American Scientific Publishers All rights reserved.",

year = "2017",

month = oct,

doi = "10.1166/jnn.2017.14730",

language = "British English",

volume = "17",

pages = "7150--7154",

journal = "Journal of Nanoscience and Nanotechnology",

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T1 - Resistive switching characteristics of tantalum oxide and titanium oxide heterojunction devices

AU - Abbas, Haider

AU - Abbas, Yawar

AU - Park, Mi Ra

AU - Hu, Quanli

AU - Lee, Tae Sung

AU - Cho, Jongweon

AU - Yoon, Tae Sik

AU - Choi, Young Jin

AU - Kang, Chi Jung

N1 - Funding Information: This research was supported by the Nano Material Technology Development Program of the National Research Foundation of Korea (NRF), with funding from the Ministry of Science, ICT and Future Planning (NRF-2011-0030228). Publisher Copyright: Copyright © 2017 American Scientific Publishers All rights reserved.

PY - 2017/10

Y1 - 2017/10

N2 - In this study, single-layer and trilayer devices with Pt/Ti/TaO2/Pt and Pt/Ti/TiOx/TaO2/TiOx/Pt structures were fabricated. For the trilayer device, a tantalum oxide thin film was sandwiched between the titanium oxide thin films. The thickness of the tantalum oxide in the single-layer device was ∼20 nm. The total trilayer oxide thickness was ~17.5 nm. The trilayer heterojunction device exhibited very stable bipolar resistive switching, which could be caused by the formation and rupture of the conducting filaments (CFs) in the oxide switching layers. The trilayer device showed better endurance and retention characteristics and low SET and RESET voltages, with very small variations. The conduction mechanisms of ohmic conduction, space-charge-limited conduction, Poole-Frenkel emission, and Schottky conduction have been investigated as the possible conduction mechanisms for the resistive switching of the devices.

AB - In this study, single-layer and trilayer devices with Pt/Ti/TaO2/Pt and Pt/Ti/TiOx/TaO2/TiOx/Pt structures were fabricated. For the trilayer device, a tantalum oxide thin film was sandwiched between the titanium oxide thin films. The thickness of the tantalum oxide in the single-layer device was ∼20 nm. The total trilayer oxide thickness was ~17.5 nm. The trilayer heterojunction device exhibited very stable bipolar resistive switching, which could be caused by the formation and rupture of the conducting filaments (CFs) in the oxide switching layers. The trilayer device showed better endurance and retention characteristics and low SET and RESET voltages, with very small variations. The conduction mechanisms of ohmic conduction, space-charge-limited conduction, Poole-Frenkel emission, and Schottky conduction have been investigated as the possible conduction mechanisms for the resistive switching of the devices.

KW - Resistive Switching

KW - RRAM

KW - Tantalum Oxide

KW - Titanium Oxide

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DO - 10.1166/jnn.2017.14730

M3 - Article

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JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 10

ER -

Resistive switching characteristics of tantalum oxide and titanium oxide heterojunction devices

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