Resistive switching characteristics in manganese oxide and tantalum oxide devices

Quanli Hu; Yawar Abbas; Haider Abbas; Mi Ra Park; Tae Sik Yoon; Chi Jung Kang

doi:10.1016/j.mee.2016.02.050

Resistive switching characteristics in manganese oxide and tantalum oxide devices

Quanli Hu, Yawar Abbas, Haider Abbas, Mi Ra Park, Tae Sik Yoon, Chi Jung Kang

Myongji University

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The monodisperse manganese oxide nanoparticles with an average diameter of 30 nm were chemically synthesized. The nanoparticles assembled as a close-packed monolayer on Pt bottom electrode by dip-coating and annealing process. The Ta/Ta₂O₅/MnO/Pt device was fabricated. The bipolar resistive switching behaviors could be caused by the formation and rupture of conductive filaments in the switching layers. The stable self-compliance property was demonstrated which can be attributed to the high resistance Ta/Ta₂O₅ interface, the Schottky barrier of Ta/Ta₂O₅, and the discontinuity of conduction band at Ta₂O₅ and MnO interface. The retention characteristics of Ta/Ta₂O₅/MnO/Pt device were investigated. The conduction mechanisms of Ohmic conduction, space charge limited conduction, Schottky conduction and Poole-Frenkel emission had been investigated for resistance switching mechanism.

Original language	British English
Pages (from-to)	49-53
Number of pages	5
Journal	Microelectronic Engineering
Volume	160
DOIs	https://doi.org/10.1016/j.mee.2016.02.050
State	Published - 1 Jul 2016

Keywords

Manganese oxide
Resistive switching
Self-compliance
Tantalum oxide

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title = "Resistive switching characteristics in manganese oxide and tantalum oxide devices",

abstract = "The monodisperse manganese oxide nanoparticles with an average diameter of 30 nm were chemically synthesized. The nanoparticles assembled as a close-packed monolayer on Pt bottom electrode by dip-coating and annealing process. The Ta/Ta2O5/MnO/Pt device was fabricated. The bipolar resistive switching behaviors could be caused by the formation and rupture of conductive filaments in the switching layers. The stable self-compliance property was demonstrated which can be attributed to the high resistance Ta/Ta2O5 interface, the Schottky barrier of Ta/Ta2O5, and the discontinuity of conduction band at Ta2O5 and MnO interface. The retention characteristics of Ta/Ta2O5/MnO/Pt device were investigated. The conduction mechanisms of Ohmic conduction, space charge limited conduction, Schottky conduction and Poole-Frenkel emission had been investigated for resistance switching mechanism.",

keywords = "Manganese oxide, Resistive switching, Self-compliance, Tantalum oxide",

author = "Quanli Hu and Yawar Abbas and Haider Abbas and Park, {Mi Ra} and Yoon, {Tae Sik} and Kang, {Chi Jung}",

note = "Funding Information: This research was supported by the Nano Material Technology Development Program of the National Research Foundation of Korea (NRF), with funding from the Ministry of Science, ICT & Future Planning ( NRF-2011-0030228 ). This research was also supported by Myongji University's 2014 Research Fund . Publisher Copyright: {\textcopyright} 2016 Elsevier B.V. All rights reserved.",

year = "2016",

month = jul,

day = "1",

doi = "10.1016/j.mee.2016.02.050",

language = "British English",

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pages = "49--53",

journal = "Microelectronic Engineering",

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T1 - Resistive switching characteristics in manganese oxide and tantalum oxide devices

AU - Hu, Quanli

AU - Abbas, Yawar

AU - Abbas, Haider

AU - Park, Mi Ra

AU - Yoon, Tae Sik

AU - Kang, Chi Jung

N1 - Funding Information: This research was supported by the Nano Material Technology Development Program of the National Research Foundation of Korea (NRF), with funding from the Ministry of Science, ICT & Future Planning ( NRF-2011-0030228 ). This research was also supported by Myongji University's 2014 Research Fund . Publisher Copyright: © 2016 Elsevier B.V. All rights reserved.

PY - 2016/7/1

Y1 - 2016/7/1

N2 - The monodisperse manganese oxide nanoparticles with an average diameter of 30 nm were chemically synthesized. The nanoparticles assembled as a close-packed monolayer on Pt bottom electrode by dip-coating and annealing process. The Ta/Ta2O5/MnO/Pt device was fabricated. The bipolar resistive switching behaviors could be caused by the formation and rupture of conductive filaments in the switching layers. The stable self-compliance property was demonstrated which can be attributed to the high resistance Ta/Ta2O5 interface, the Schottky barrier of Ta/Ta2O5, and the discontinuity of conduction band at Ta2O5 and MnO interface. The retention characteristics of Ta/Ta2O5/MnO/Pt device were investigated. The conduction mechanisms of Ohmic conduction, space charge limited conduction, Schottky conduction and Poole-Frenkel emission had been investigated for resistance switching mechanism.

AB - The monodisperse manganese oxide nanoparticles with an average diameter of 30 nm were chemically synthesized. The nanoparticles assembled as a close-packed monolayer on Pt bottom electrode by dip-coating and annealing process. The Ta/Ta2O5/MnO/Pt device was fabricated. The bipolar resistive switching behaviors could be caused by the formation and rupture of conductive filaments in the switching layers. The stable self-compliance property was demonstrated which can be attributed to the high resistance Ta/Ta2O5 interface, the Schottky barrier of Ta/Ta2O5, and the discontinuity of conduction band at Ta2O5 and MnO interface. The retention characteristics of Ta/Ta2O5/MnO/Pt device were investigated. The conduction mechanisms of Ohmic conduction, space charge limited conduction, Schottky conduction and Poole-Frenkel emission had been investigated for resistance switching mechanism.

KW - Manganese oxide

KW - Resistive switching

KW - Self-compliance

KW - Tantalum oxide

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U2 - 10.1016/j.mee.2016.02.050

DO - 10.1016/j.mee.2016.02.050

M3 - Article

AN - SCOPUS:84960347976

SN - 0167-9317

VL - 160

SP - 49

EP - 53

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Resistive switching characteristics in manganese oxide and tantalum oxide devices

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Keywords

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