Resistive switching characteristics in manganese oxide and tantalum oxide devices

Quanli Hu, Yawar Abbas, Haider Abbas, Mi Ra Park, Tae Sik Yoon, Chi Jung Kang

    Research output: Contribution to journalArticlepeer-review

    13 Scopus citations


    The monodisperse manganese oxide nanoparticles with an average diameter of 30 nm were chemically synthesized. The nanoparticles assembled as a close-packed monolayer on Pt bottom electrode by dip-coating and annealing process. The Ta/Ta2O5/MnO/Pt device was fabricated. The bipolar resistive switching behaviors could be caused by the formation and rupture of conductive filaments in the switching layers. The stable self-compliance property was demonstrated which can be attributed to the high resistance Ta/Ta2O5 interface, the Schottky barrier of Ta/Ta2O5, and the discontinuity of conduction band at Ta2O5 and MnO interface. The retention characteristics of Ta/Ta2O5/MnO/Pt device were investigated. The conduction mechanisms of Ohmic conduction, space charge limited conduction, Schottky conduction and Poole-Frenkel emission had been investigated for resistance switching mechanism.

    Original languageBritish English
    Pages (from-to)49-53
    Number of pages5
    JournalMicroelectronic Engineering
    StatePublished - 1 Jul 2016


    • Manganese oxide
    • Resistive switching
    • Self-compliance
    • Tantalum oxide


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