Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices

Mi Ra Park; Yawar Abbas; Haider Abbas; Quanli Hu; Tae Sung Lee; Young Jin Choi; Tae Sik Yoon; Hyun Ho Lee; Chi Jung Kang

doi:10.1016/j.mee.2016.03.043

Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices

Mi Ra Park, Yawar Abbas, Haider Abbas, Quanli Hu, Tae Sung Lee, Young Jin Choi, Tae Sik Yoon, Hyun Ho Lee, Chi Jung Kang

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

In our study, the devices with Pt/Ti/TaO_x/Pt, where x ranges from 1.34 to 1.47, Pt/Ti/HfO₂/Pt and Pt/Ti/TaO_y/HfO₂/Pt were fabricated. The TaO_x and HfO₂ were the switching layers for single layer devices and for hybrid device TaO_y acted as oxygen reservoir and HfO₂ acted as switching layer. The single layer devices exhibited co-existence of bipolar and unipolar switching. For bipolar switching the SET process occurred when positive sweep voltage was applied and RESET process occurred for negative sweep. The transition from bipolar to unipolar was observed to be irreversible. The hybrid device exhibited the unipolar switching with two high resistance state (HRS) levels. Moreover, the conduction mechanism of ohmic conduction, space charge limited conduction (SCLC); Schottky conduction and Poole-Frenkel (P-F) conduction have been investigated.

Original language	British English
Pages (from-to)	190-197
Number of pages	8
Journal	Microelectronic Engineering
Volume	159
DOIs	https://doi.org/10.1016/j.mee.2016.03.043
State	Published - 15 Jun 2016

Keywords

Co-existence
Irreversible transition
Memory device
Resistive switching

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10.1016/j.mee.2016.03.043

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@article{11ee0b46137b4e7bbe45abb2cad5e606,

title = "Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices",

abstract = "In our study, the devices with Pt/Ti/TaOx/Pt, where x ranges from 1.34 to 1.47, Pt/Ti/HfO2/Pt and Pt/Ti/TaOy/HfO2/Pt were fabricated. The TaOx and HfO2 were the switching layers for single layer devices and for hybrid device TaOy acted as oxygen reservoir and HfO2 acted as switching layer. The single layer devices exhibited co-existence of bipolar and unipolar switching. For bipolar switching the SET process occurred when positive sweep voltage was applied and RESET process occurred for negative sweep. The transition from bipolar to unipolar was observed to be irreversible. The hybrid device exhibited the unipolar switching with two high resistance state (HRS) levels. Moreover, the conduction mechanism of ohmic conduction, space charge limited conduction (SCLC); Schottky conduction and Poole-Frenkel (P-F) conduction have been investigated.",

keywords = "Co-existence, Irreversible transition, Memory device, Resistive switching",

author = "Park, {Mi Ra} and Yawar Abbas and Haider Abbas and Quanli Hu and Lee, {Tae Sung} and Choi, {Young Jin} and Yoon, {Tae Sik} and Lee, {Hyun Ho} and Kang, {Chi Jung}",

note = "Funding Information: This research was supported by Nano Material Technology Development Program through the National Research foundation of Korea (NRF) funded by Ministry of Science, ICT & Future Planning ( NRF-2011-0030228 ). Publisher Copyright: {\textcopyright} 2016 Elsevier B.V. All rights reserved.",

year = "2016",

month = jun,

day = "15",

doi = "10.1016/j.mee.2016.03.043",

language = "British English",

volume = "159",

pages = "190--197",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices

AU - Park, Mi Ra

AU - Abbas, Yawar

AU - Abbas, Haider

AU - Hu, Quanli

AU - Lee, Tae Sung

AU - Choi, Young Jin

AU - Yoon, Tae Sik

AU - Lee, Hyun Ho

AU - Kang, Chi Jung

N1 - Funding Information: This research was supported by Nano Material Technology Development Program through the National Research foundation of Korea (NRF) funded by Ministry of Science, ICT & Future Planning ( NRF-2011-0030228 ). Publisher Copyright: © 2016 Elsevier B.V. All rights reserved.

PY - 2016/6/15

Y1 - 2016/6/15

N2 - In our study, the devices with Pt/Ti/TaOx/Pt, where x ranges from 1.34 to 1.47, Pt/Ti/HfO2/Pt and Pt/Ti/TaOy/HfO2/Pt were fabricated. The TaOx and HfO2 were the switching layers for single layer devices and for hybrid device TaOy acted as oxygen reservoir and HfO2 acted as switching layer. The single layer devices exhibited co-existence of bipolar and unipolar switching. For bipolar switching the SET process occurred when positive sweep voltage was applied and RESET process occurred for negative sweep. The transition from bipolar to unipolar was observed to be irreversible. The hybrid device exhibited the unipolar switching with two high resistance state (HRS) levels. Moreover, the conduction mechanism of ohmic conduction, space charge limited conduction (SCLC); Schottky conduction and Poole-Frenkel (P-F) conduction have been investigated.

AB - In our study, the devices with Pt/Ti/TaOx/Pt, where x ranges from 1.34 to 1.47, Pt/Ti/HfO2/Pt and Pt/Ti/TaOy/HfO2/Pt were fabricated. The TaOx and HfO2 were the switching layers for single layer devices and for hybrid device TaOy acted as oxygen reservoir and HfO2 acted as switching layer. The single layer devices exhibited co-existence of bipolar and unipolar switching. For bipolar switching the SET process occurred when positive sweep voltage was applied and RESET process occurred for negative sweep. The transition from bipolar to unipolar was observed to be irreversible. The hybrid device exhibited the unipolar switching with two high resistance state (HRS) levels. Moreover, the conduction mechanism of ohmic conduction, space charge limited conduction (SCLC); Schottky conduction and Poole-Frenkel (P-F) conduction have been investigated.

KW - Co-existence

KW - Irreversible transition

KW - Memory device

KW - Resistive switching

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U2 - 10.1016/j.mee.2016.03.043

DO - 10.1016/j.mee.2016.03.043

M3 - Article

AN - SCOPUS:84962744013

SN - 0167-9317

VL - 159

SP - 190

EP - 197

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices

Abstract

Keywords

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