TY - JOUR
T1 - Resistive switching behaviour in ZrO2-CNT nanocomposite film
AU - Sharma, Aman
AU - Faraz, Mohd
AU - Khare, Neeraj
N1 - Publisher Copyright:
© The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature 2024.
PY - 2024/8
Y1 - 2024/8
N2 - Resistive Random Access Memory (ReRAM) devices are being regarded as very promising choices for the future of non-volatile memory technology. The subject comprises crucial components like as material engineering, device architectural optimization, switching mechanisms, and improvements in reliability. This study examines the resistive switching capabilities of a device made from a ZrO2-CNT nanocomposite. The device was constructed utilizing a trilayer structure consisting of FTO/ZrO2-CNT/Ag, with the ZrO2-CNT film being fabricated by the spray coating technique. Incorporating 1wt% CNT into the ZrO2 matrix reduces the bias voltage needed for resistive switching and approximately doubles the resistance ratio between HRS and LRS. The use of higher weight percentages of carbon nanotubes (CNT) negatively impacts the switching properties. The temperature dependence of resistance of ZrO2 and ZrO2-1wt% CNT devices reveals that in ZrO2, O2 vacancies align to create conducting filaments. On the other hand, in the ZrO2-CNT device, both vacancies of O2 atoms and CNTs contribute to the production of conducting filaments. Inclusion of higher weight percentages of carbon nanotubes (CNT) leads to the formation of permanent conduction paths, which are electrical shorts and results in the loss of the switching capability.
AB - Resistive Random Access Memory (ReRAM) devices are being regarded as very promising choices for the future of non-volatile memory technology. The subject comprises crucial components like as material engineering, device architectural optimization, switching mechanisms, and improvements in reliability. This study examines the resistive switching capabilities of a device made from a ZrO2-CNT nanocomposite. The device was constructed utilizing a trilayer structure consisting of FTO/ZrO2-CNT/Ag, with the ZrO2-CNT film being fabricated by the spray coating technique. Incorporating 1wt% CNT into the ZrO2 matrix reduces the bias voltage needed for resistive switching and approximately doubles the resistance ratio between HRS and LRS. The use of higher weight percentages of carbon nanotubes (CNT) negatively impacts the switching properties. The temperature dependence of resistance of ZrO2 and ZrO2-1wt% CNT devices reveals that in ZrO2, O2 vacancies align to create conducting filaments. On the other hand, in the ZrO2-CNT device, both vacancies of O2 atoms and CNTs contribute to the production of conducting filaments. Inclusion of higher weight percentages of carbon nanotubes (CNT) leads to the formation of permanent conduction paths, which are electrical shorts and results in the loss of the switching capability.
KW - High resistive state
KW - Low resistive state
KW - Resistance-temperature measurement
KW - Resistive random access memory device
KW - ZrO
UR - https://www.scopus.com/pages/publications/85199158031
U2 - 10.1007/s00339-024-07721-2
DO - 10.1007/s00339-024-07721-2
M3 - Article
AN - SCOPUS:85199158031
SN - 0947-8396
VL - 130
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 8
M1 - 575
ER -