Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy

M. H. Xie, L. X. Zheng, S. H. Cheung, Y. F. Ng, Huasheng Wu, S. Y. Tong, N. Ohtani

Research output: Contribution to journalArticlepeer-review

56 Scopus citations

Fingerprint

Dive into the research topics of 'Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy'. Together they form a unique fingerprint.

Engineering

Material Science