Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga+ via Focused Ion Beam

S. Alaie; M. G. Baboly; Y. B. Jiang; S. Rempe; D. H. Anjum; S. Chaieb; B. F. Donovan; A. Giri; C. J. Szwejkowski; J. T. Gaskins; M. M.M. Elahi; D. F. Goettler; J. Braun; P. E. Hopkins; Z. C. Leseman

doi:10.1021/acsami.8b11949

Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga⁺ via Focused Ion Beam

S. Alaie
, M. G. Baboly
, Y. B. Jiang
, S. Rempe
, D. H. Anjum
, S. Chaieb
, B. F. Donovan
, A. Giri
, C. J. Szwejkowski
, J. T. Gaskins
, M. M.M. Elahi
, D. F. Goettler
, J. Braun
, P. E. Hopkins
, Z. C. Leseman

Physics

Weill Cornell Medicine
University of Jamestown
University of New Mexico
Sandia National Laboratories, New Mexico
King Abdullah University of Science and Technology
Lawrence Berkeley National Laboratory
Tokyo Institute of Technology
United States Naval Academy
University of Virginia
Kansas State University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Focused ion beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however, are not well understood nor do experimental data exist. This paper presents a carefully designed set of experiments for the determination of the thermal conductivity of Si samples irradiated by Ga⁺ FIB. Generally, the thermal conductivity decreases with increasing ion dose. For doses of >10¹⁶ (Ga⁺/cm²), a reversal of the trend was observed due to recrystallization of Si. This report provides insight on the thermal transport considerations relevant to engineering of Si nanostructures and interfaces fabricated or prepared by FIB.

Original language	British English
Pages (from-to)	37679-37684
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	43
DOIs	https://doi.org/10.1021/acsami.8b11949
State	Published - 31 Oct 2018

Keywords

focused ion beam (FIB)
gallium
irradiated
nanostructures
thermal conductivity
time-domain thermoreflectance (TDTR)

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10.1021/acsami.8b11949

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Alaie, S., Baboly, M. G., Jiang, Y. B., Rempe, S., Anjum, D. H., Chaieb, S., Donovan, B. F., Giri, A., Szwejkowski, C. J., Gaskins, J. T., Elahi, M. M. M., Goettler, D. F., Braun, J., Hopkins, P. E., & Leseman, Z. C. (2018). Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga⁺ via Focused Ion Beam. ACS Applied Materials and Interfaces, 10(43), 37679-37684. https://doi.org/10.1021/acsami.8b11949

@article{52676e5458724a1b94747a4cdd3b035b,

title = "Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga+ via Focused Ion Beam",

abstract = "Focused ion beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however, are not well understood nor do experimental data exist. This paper presents a carefully designed set of experiments for the determination of the thermal conductivity of Si samples irradiated by Ga+ FIB. Generally, the thermal conductivity decreases with increasing ion dose. For doses of >1016 (Ga+/cm2), a reversal of the trend was observed due to recrystallization of Si. This report provides insight on the thermal transport considerations relevant to engineering of Si nanostructures and interfaces fabricated or prepared by FIB.",

keywords = "focused ion beam (FIB), gallium, irradiated, nanostructures, thermal conductivity, time-domain thermoreflectance (TDTR)",

author = "S. Alaie and Baboly, \{M. G.\} and Jiang, \{Y. B.\} and S. Rempe and Anjum, \{D. H.\} and S. Chaieb and Donovan, \{B. F.\} and A. Giri and Szwejkowski, \{C. J.\} and Gaskins, \{J. T.\} and Elahi, \{M. M.M.\} and Goettler, \{D. F.\} and J. Braun and Hopkins, \{P. E.\} and Leseman, \{Z. C.\}",

note = "Funding Information: S.A., M.G.B., D.F.G., and Z.C.L. acknowledge support from the National Science Foundation Division of CMMI under Award 1056077. Materials supplied by P.E.H. et al. are based upon work partially supported by the Air Force Office of Scientific Research under award number FA9550-18-1-0352. P.E.H. is also appreciative for support from the National Science Foundation, Grant no. CBET-1706388. Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

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Alaie, S, Baboly, MG, Jiang, YB, Rempe, S, Anjum, DH, Chaieb, S, Donovan, BF, Giri, A, Szwejkowski, CJ, Gaskins, JT, Elahi, MMM, Goettler, DF, Braun, J, Hopkins, PE & Leseman, ZC 2018, 'Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga⁺ via Focused Ion Beam', ACS Applied Materials and Interfaces, vol. 10, no. 43, pp. 37679-37684. https://doi.org/10.1021/acsami.8b11949

TY - JOUR

T1 - Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga+ via Focused Ion Beam

AU - Alaie, S.

AU - Baboly, M. G.

AU - Jiang, Y. B.

AU - Rempe, S.

AU - Anjum, D. H.

AU - Chaieb, S.

AU - Donovan, B. F.

AU - Giri, A.

AU - Szwejkowski, C. J.

AU - Gaskins, J. T.

AU - Elahi, M. M.M.

AU - Goettler, D. F.

AU - Braun, J.

AU - Hopkins, P. E.

AU - Leseman, Z. C.

N1 - Funding Information: S.A., M.G.B., D.F.G., and Z.C.L. acknowledge support from the National Science Foundation Division of CMMI under Award 1056077. Materials supplied by P.E.H. et al. are based upon work partially supported by the Air Force Office of Scientific Research under award number FA9550-18-1-0352. P.E.H. is also appreciative for support from the National Science Foundation, Grant no. CBET-1706388. Publisher Copyright: © 2018 American Chemical Society.

PY - 2018/10/31

Y1 - 2018/10/31

N2 - Focused ion beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however, are not well understood nor do experimental data exist. This paper presents a carefully designed set of experiments for the determination of the thermal conductivity of Si samples irradiated by Ga+ FIB. Generally, the thermal conductivity decreases with increasing ion dose. For doses of >1016 (Ga+/cm2), a reversal of the trend was observed due to recrystallization of Si. This report provides insight on the thermal transport considerations relevant to engineering of Si nanostructures and interfaces fabricated or prepared by FIB.

AB - Focused ion beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however, are not well understood nor do experimental data exist. This paper presents a carefully designed set of experiments for the determination of the thermal conductivity of Si samples irradiated by Ga+ FIB. Generally, the thermal conductivity decreases with increasing ion dose. For doses of >1016 (Ga+/cm2), a reversal of the trend was observed due to recrystallization of Si. This report provides insight on the thermal transport considerations relevant to engineering of Si nanostructures and interfaces fabricated or prepared by FIB.

KW - focused ion beam (FIB)

KW - gallium

KW - irradiated

KW - nanostructures

KW - thermal conductivity

KW - time-domain thermoreflectance (TDTR)

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DO - 10.1021/acsami.8b11949

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SN - 1944-8244

VL - 10

SP - 37679

EP - 37684

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

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