Abstract
The first experimental results of the temperature dependent radiative properties of separation by implantation of oxygen (SIMOX) wafers, in the literature, have been reported in this study. These measurements have been performed in the temperature range of 17 to 800°C and wavelength range of 0.8 to 20 μm using a spectral emissometer. A modeling approach based on Multi-Rad, a matrix method of representing multi-layers, has been adopted to interpret the experimental data. Operating ranges of wavelength for pyrometry have been suggested for a reliable monitoring of temperature for processing SIMOX wafers.
| Original language | British English |
|---|---|
| Pages (from-to) | 441-448 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Components Packaging and Manufacturing Technology Part A |
| Volume | 21 |
| Issue number | 3 |
| DOIs | |
| State | Published - Sep 1998 |
Keywords
- Emissivity
- Pyrometer
- Radiative properties
- SIMOX
- SOI
- Temperature measurement