Radiative properties of SIMOX

Nuggehalli M. Ravindra, Sufian Abedrabbo, Oktay H. Gokce, Feiming Tong, Anamika Patel, Rajasekhar Velagapudi, Gary D. Williamson, Witold P. Maszara

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The first experimental results of the temperature dependent radiative properties of separation by implantation of oxygen (SIMOX) wafers, in the literature, have been reported in this study. These measurements have been performed in the temperature range of 17 to 800°C and wavelength range of 0.8 to 20 μm using a spectral emissometer. A modeling approach based on Multi-Rad, a matrix method of representing multi-layers, has been adopted to interpret the experimental data. Operating ranges of wavelength for pyrometry have been suggested for a reliable monitoring of temperature for processing SIMOX wafers.

Original languageBritish English
Pages (from-to)441-448
Number of pages8
JournalIEEE Transactions on Components Packaging and Manufacturing Technology Part A
Volume21
Issue number3
DOIs
StatePublished - Sep 1998

Keywords

  • Emissivity
  • Pyrometer
  • Radiative properties
  • SIMOX
  • SOI
  • Temperature measurement

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