Processing for optically active erbium in silicon by film co-deposition and ion-beam mixing

S. Abedrabbo, Q. Mohammed, A. T. Fiory

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Techniques of film deposition by co-evaporation, ion-beam assisted mixing, oxygen ion implantation, and thermal annealing were been combined in a novel way to study processing of erbium-in-silicon thin-film materials for optoelectronics applications. Structures with erbium concentrations above atomic solubility in silicon and below that of silicide compounds were prepared by vacuum co-evaporation from two elemental sources to deposit 200-270 nm films on crystalline silicon substrates. Ar + ions were implanted at 300 keV. Oxygen was incorporated by O + -ion implantation at 130 keV. Samples were annealed at 600 °C in vacuum. Concentration profiles of the constituent elements were obtained by Rutherford backscattering spectrometry. Results show that diffusion induced by ion-beam mixing and activated by thermal annealing depends on the deposited Si-Er profile and reaction with implanted oxygen. Room temperature photoluminescence spectra show Er 3+ transitions in a 1480-1550 nm band and integrated intensities that increase with the oxygen-to-erbium ratio.

Original languageBritish English
Pages (from-to)4503-4511
Number of pages9
JournalApplied Surface Science
Issue number8
StatePublished - 1 Feb 2009


  • Enhanced diffusion
  • Erbium optoelectronics
  • Ion-beam processing


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